W9825G2JB-6 TR
| Part Description |
IC DRAM 256MBIT PAR 90TFBGA |
|---|---|
| Quantity | 557 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of W9825G2JB-6 TR – 256 Mbit SDRAM, Parallel Interface, 90‑TFBGA
The W9825G2JB-6 TR is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16 with a parallel memory interface. It operates with a clock frequency up to 166 MHz and is optimized for systems that require volatile high-density memory in a compact 90‑TFBGA (8×13) package.
This SDRAM is suited for designs where predictable access timing, moderate operating temperature range (0°C to 70°C), and a 3.0 V to 3.6 V supply are required. The device includes documented timing and command behavior appropriate for burst-oriented memory access patterns.
Key Features
- Memory Type: Volatile SDRAM — Standard synchronous DRAM format for burst-oriented access.
- Density & Organization: 256 Mbit capacity organized as 16M × 16, providing a wide 16‑bit data bus for parallel system interfaces.
- Performance: 166 MHz maximum clock frequency with a 5 ns access time specification for responsive read/write operations.
- Voltage: 3.0 V to 3.6 V supply range compatible with common 3.3 V system rails.
- Package: 90‑TFBGA (8×13) supplier device package — compact ball-grid array footprint for high-density board designs.
- Operating Range: 0°C to 70°C ambient operating temperature (TA) for standard commercial applications.
- Interface & Mode Support: Parallel memory interface with documented SDRAM command set and burst modes as detailed in manufacturer documentation.
Typical Applications
- Embedded Systems — Provides 256 Mbit of volatile system memory for firmware, buffering, or working RAM in compact embedded platforms.
- Consumer Electronics — Suited for devices requiring moderate-speed parallel SDRAM in a small BGA package and standard commercial temperature range.
- Networking & Communications Modules — Can be used for packet buffering or temporary data storage where a 16‑bit parallel interface and 166 MHz clocking are appropriate.
Unique Advantages
- High-density, compact footprint: 256 Mbit capacity in a 90‑TFBGA (8×13) package reduces board area while delivering substantial memory capacity.
- Parallel 16‑bit data path: Wide data bus organization (16M × 16) enables straightforward integration into parallel memory architectures.
- Documented SDRAM behavior: Manufacturer datasheet provides detailed command timing, burst modes, and operating examples to aid design verification.
- Standard supply compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system rails for simplified power design.
- Performance for burst access: 166 MHz clocking and 5 ns access time support burst-oriented memory transactions with predictable timing.
Why Choose IC DRAM 256MBIT PAR 90TFBGA?
The W9825G2JB-6 TR positions itself as a straightforward, high-density SDRAM option for designs that require a 16‑bit parallel interface, documented synchronous command and timing behavior, and a compact BGA package. Its 256 Mbit capacity, 166 MHz clock rating, and 3.0 V–3.6 V supply make it suitable for a range of commercial applications where reliable volatile storage and burst access are needed.
With manufacturer-provided datasheet details covering command timing, operation modes, and package specifications, the device is well suited for engineers seeking a verifiable SDRAM building block for mid-density memory requirements in consumer and embedded product designs.
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