W9812G6KH-6I TR

The W9812G6KH-6I TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with an LVTTL memory interface in a 54‑TSOP II package. It implements a 2M × 4 banks × 16‑bit architecture and supports standard SDRAM command and timing features.

Designed for systems requiring synchronous DRAM storage, this device targets personal computer and industrial system memory applications where a compact 54‑TSOP footprint, 3.0–3.6 V operation and extended temperature capability are required.

Key Features

• Memory Capacity & Organization — 128 Mbit total capacity, organized as 8M × 16 (2M × 4 banks × 16 bits) to support multi‑bank SDRAM operation.
• SDRAM Core Functions — Supports bank activate, read/write, burst read/write, auto‑precharge, self‑refresh and power‑down operation as described in the device functional specification.
• Interface — LVTTL memory interface for control and data signaling.
• Performance — Rated with a clock frequency up to 166 MHz and an access time of 5 ns; datasheet notes data bandwidth capability up to 200M words per second for supported speed grades.
• Voltage & Power — Nominal supply range 3.0 V to 3.6 V.
• Package — 54‑lead TSOP II package (0.400" / 10.16 mm width) for compact board footprint and surface‑mount assembly.
• Temperature Range — Specified operating ambient range −40 °C to 85 °C (TA), suitable for extended temperature applications.

Typical Applications

• Personal computer memory subsystems — Implements SDRAM functions and speed grades aligned with personal computer standards for system memory modules and memory expansion designs.
• Industrial computing equipment — Extended −40 °C to 85 °C operating range supports deployment in industrial and temperature‑challenged environments.
• Compact embedded systems — 54‑TSOP II package and LVTTL interface enable use in space‑constrained embedded memory designs requiring synchronous DRAM.

Unique Advantages

• Multi‑bank SDRAM architecture: 2M × 4 banks × 16 bits organization enables concurrent bank operations and standard SDRAM command sequences for flexible memory access patterns.
• High data bandwidth potential: Documented bandwidth capability (up to 200M words per second for supported grades) supports high‑throughput read/write bursts when operated at rated clock frequencies.
• Extended temperature support: −40 °C to 85 °C operating range addresses designs that require reliable operation across industrial ambient conditions.
• Compact surface‑mount package: 54‑TSOP II (0.400", 10.16 mm width) delivers a small board footprint for dense or space‑limited PCBs.
• Standard SDRAM feature set: Built‑in support for mode register programming, auto‑refresh, self‑refresh, power‑down and burst modes simplifies integration with standard SDRAM controllers.
• 3.0–3.6 V supply range: Widely used supply window for systems designed around standard SDRAM voltage rails.

Why Choose IC DRAM 128MBIT LVTTL 54TSOP II?

The W9812G6KH-6I TR combines a standard SDRAM command set and multi‑bank architecture with a compact 54‑TSOP II package and LVTTL interface, making it suitable for designs that need synchronous DRAM storage with extended temperature capability. Its rated clock and access characteristics, together with documented bandwidth performance, support demanding burst and sequential access patterns.

This device is a practical choice for engineers designing personal computer memory subsystems, industrial computing platforms and compact embedded systems that require a verified SDRAM implementation with a 3.0–3.6 V supply and −40 °C to 85 °C operating range.

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