W9812G6KH-6I

The W9812G6KH-6I from Winbond Electronics is a high-speed synchronous DRAM (SDRAM) device providing 128 Mbit of volatile memory in an 8M × 16 organization. It implements a four-bank architecture (2M × 4 banks × 16 bits) with an LVTTL interface, designed for systems requiring a 3.0–3.6 V supply and operation across an extended industrial temperature range.

Typical uses include designs that require a compact 54‑TSOP II package and deterministic SDRAM command support (burst read/write, auto-precharge, self-refresh and power-down). The device targets applications where a 166 MHz clock, 5 ns access time and support for up to 200M words per second data bandwidth are required.

Key Features

• Memory Architecture Organized as 8M × 16 (2M × 4 banks × 16 bits) SDRAM to support multi-bank operation and standard SDRAM command sequences.
• Performance 166 MHz clock frequency with an access time of 5 ns and datasheet-listed data bandwidth capability up to 200M words per second.
• Interface LVTTL memory interface for logic-level compatible control and data signaling.
• Power Rated for operation from 3.0 V to 3.6 V supply voltage.
• Low‑level SDRAM Functionality Supports burst read/write, auto-precharge, self-refresh, power-down and clock suspend modes as defined in the SDRAM functional description.
• Operating Temperature Industrial temperature support from −40 °C to 85 °C (TA).
• Package 54‑TSOP II (0.400", 10.16 mm width) standard supplier device package for board-level integration.

Typical Applications

• Industrial Systems Use as system SDRAM where extended temperature operation (−40 °C to 85 °C) and 3.0–3.6 V supply compatibility are required.
• Embedded Memory Subsystems 128 Mbit density and LVTTL interface make it suitable for embedded boards needing synchronous DRAM buffers or working memory.
• Computer and Module Designs Compatible with designs following personal computer industrial SDRAM standards that require burst operation and multi-bank access.

Unique Advantages

• Industrial temperature capability: Guaranteed operation from −40 °C to 85 °C for deployment in temperature-sensitive environments.
• Deterministic SDRAM command support: Built-in support for burst modes, auto-precharge, self-refresh and power-down simplifies memory control firmware.
• High throughput at typical clock rates: 166 MHz clocking and documented bandwidth up to 200M words per second provide predictable performance for data-intensive tasks.
• Compact, board-friendly package: 54‑TSOP II package (0.400", 10.16 mm) enables dense PCB layouts while using a standard supplier device package.
• Standardized voltage range: 3.0–3.6 V supply simplifies integration with common 3.3 V logic domains.

Why Choose W9812G6KH-6I?

The W9812G6KH-6I combines a four-bank SDRAM architecture with LVTTL signaling and industrial temperature operation to meet the needs of embedded and industrial memory designs that require predictable SDRAM behavior. Its 128 Mbit capacity, 166 MHz clock capability and support for core SDRAM commands make it suitable for systems demanding synchronous burst transfers and standard memory control sequences.

Designed and documented by Winbond Electronics, the device provides clear electrical and timing specifications (including access times, operating voltage and supported commands) so engineers can integrate and validate memory subsystems with confidence.

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