W9812G6KH-5I

The W9812G6KH-5I is a high-speed synchronous dynamic random access memory (SDRAM) device providing 128 Mbit of volatile storage in a 54‑TSOP II package. It is organized as 2M × 4 banks × 16 bits (8M × 16) and implements standard SDRAM command and timing features for burst and banked operation.

Designed for systems requiring a 200 MHz clock domain with LVTTL interface signaling, this -5I industrial grade part is specified to operate across an extended ambient temperature range of -40°C to 85°C.

Key Features

• Memory Architecture  Organized as 2M × 4 banks × 16 bits (8M × 16) to support banked access and burst operations; total density 128 Mbit.
• Speed and Timing  Clock frequency up to 200 MHz with an access time of 4.5 ns; compliant to the 200 MHz / CL3 timing grade for the -5I variant.
• Interface  LVTTL memory interface for input/output signaling.
• Power  Supply voltage range 3.0 V to 3.6 V.
• Operating Modes & Commands  Supports standard SDRAM functions including bank activate, burst read/write, auto-precharge, precharge, self-refresh, power-down and mode register programming as documented in the device specification.
• Package & Mechanical  54-TSOP II package (0.400", 10.16 mm width) for PCB footprint and placement compatibility.
• Thermal Range  Industrial operating ambient temperature range of -40°C to 85°C for the -5I grade.

Typical Applications

• Personal computer / industrial systems  Memory configurations that require SDRAM compliant with personal computer industrial standards.
• LVTTL-based memory subsystems  Modules and boards that use LVTTL signaling for SDRAM connectivity.
• Compact board-level memory  Designs constrained to a 54‑TSOP II footprint that require 128 Mbit SDRAM density.

Unique Advantages

• High data throughput: Delivers up to 200M words per second at the -5I speed grade, enabling high-rate burst transfers.
• Banked architecture for concurrency: 2M × 4 bank organization supports interleaved bank operation and efficient burst sequencing.
• Industrial temperature support: The -5I grade is specified for -40°C to 85°C ambient operation, suitable for extended-temperature deployments.
• Standard LVTTL interface: Simplifies integration into systems that use LVTTL signaling for memory control and data I/O.
• Compact TSOP II package: 54‑TSOP (0.400", 10.16 mm width) provides a compact, board-level footprint for space-constrained designs.
• Well-documented operation: Detailed command, timing and operating-mode descriptions (burst lengths, CAS latency, self-refresh, power-down) are provided in the device documentation.

Why Choose W9812G6KH-5I?

The W9812G6KH-5I positions as a documented, high-speed SDRAM option for designers needing 128 Mbit density with banked SDRAM features and LVTTL signaling. Its 200 MHz capability and 4.5 ns access time support high-rate burst transfers while the 54‑TSOP II package addresses compact board-level deployments.

This part is suited to designs that require industrial ambient operation and standardized SDRAM command/timing behavior, backed by comprehensive device documentation covering modes, timing waveforms and programming sequences.

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