W9812G6KB-6I

IC DRAM 128MBIT LVTTL 54TFBGA
Part Description

IC DRAM 128MBIT LVTTL 54TFBGA

Quantity 725 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TC)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of W9812G6KB-6I – IC DRAM 128Mbit LVTTL 54TFBGA

The W9812G6KB-6I is a high-speed synchronous dynamic RAM (SDRAM) device providing 128 Mbit of volatile memory in an 8M × 16 organization (2M × 4 banks × 16 bits). It supports synchronous burst-oriented access and is offered in an industrial -6I speed grade.

Designed for systems that require compact, high-throughput external memory, the device runs up to 166 MHz with a LVTTL memory interface and operates from a 3.0 V to 3.6 V supply. The -6I grade is specified for operation from -40 °C to 85 °C and is supplied in a 54‑TFBGA (8 × 8 mm) package.

Key Features

  • Memory Architecture  8M × 16 organization (2M × 4 banks × 16 bits) delivering 128 Mbit total capacity and burst-oriented access for sequential data transfers.
  • Performance  Rated for operation up to 166 MHz with an access time of 5 ns, supporting high-rate synchronous memory transactions.
  • Interface  LVTTL memory interface for standard TTL-compatible signal levels.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Operational Modes  Supports SDRAM control functions including mode register programming, auto-precharge, auto-refresh, self-refresh and power-down modes as described in the device functional specification.
  • Package  54‑TFBGA (8 × 8 mm) ball-grid array for compact board footprint.
  • Temperature Range  Industrial -6I grade specified for operation from -40 °C to 85 °C.

Typical Applications

  • Embedded memory expansion  External SDRAM for microcontroller- or FPGA-based systems requiring 128 Mbit of volatile storage with burst access.
  • Industrial control equipment  Systems that need memory rated for operation across -40 °C to 85 °C.
  • Compact board designs  Applications requiring a small footprint memory solution using a 54‑TFBGA (8 × 8 mm) package.

Unique Advantages

  • Industrial temperature capability: The -6I grade supports operation from -40 °C to 85 °C, enabling use in temperature-challenging environments.
  • Synchronous burst performance: Up to 166 MHz operation and burst-oriented access support efficient high-throughput memory transfers.
  • Standard LVTTL interface: TTL-compatible signaling simplifies integration with common logic families and controllers that support LVTTL.
  • Compact BGA package: 54‑TFBGA (8 × 8 mm) reduces PCB area while providing a robust ball-grid array mounting.
  • Flexible power range: 3.0 V to 3.6 V supply range accommodates typical 3.3 V system rails.

Why Choose W9812G6KB-6I?

The W9812G6KB-6I balances compact packaging and industrial temperature capability with synchronous SDRAM performance. Its 128 Mbit capacity, 8M × 16 organization and up to 166 MHz operation provide a straightforward external memory option for embedded and industrial applications that need burst-oriented data transfers and a small PCB footprint.

Engineers specifying this device benefit from clear operational modes (auto-refresh, self-refresh, power-down, auto-precharge) and a LVTTL interface that aligns with common system logic levels, making the W9812G6KB-6I a practical choice where verifiable SDRAM behavior and temperature range are required.

Request a quote or submit an RFQ to obtain pricing and availability for the W9812G6KB-6I. Include required quantities and delivery timeframe to accelerate your response.

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