W9825G6JB-6

The W9825G6JB-6 is a high-speed synchronous dynamic random access memory (SDRAM) device offering 256 Mbit of volatile storage in a parallel memory interface. It is organized internally as 4M × 4 banks × 16 bits and is provided in a 54‑TFBGA (8×8) package tailored for space-conscious board designs.

Designed for systems that require synchronous parallel DRAM, this device supports a 166 MHz clock frequency (‑6 speed grade) and a variety of SDRAM command/burst modes for controlled, burst-oriented access patterns.

Key Features

• Memory Architecture  Organized as 4M × 4 banks × 16 bits (equivalent to 16M × 16), delivering a total memory size of 256 Mbit in a DRAM format.
• High-speed Operation  Supports a clock frequency up to 166 MHz for the -6 speed grade and is specified for CAS latency modes per the device speed grade.
• Access Performance  Characterized with an access time of 5 ns to support fast read/write cycles.
• Parallel Memory Interface  Standard parallel SDRAM interface with full support for burst read/write, auto-precharge and multiple bank operations as described in the device functional description.
• Power and Voltage  Operates from a supply range of 3.0 V to 3.6 V.
• Package  54‑TFBGA (8×8) package case suitable for compact PCB layouts.
• Operating Temperature  Specified ambient operating temperature range of 0 °C to 70 °C (TA).

Typical Applications

• Embedded system memory  Use as synchronous parallel DRAM for designs requiring 256 Mbit of volatile storage with burst access capability.
• Board-level memory modules  Integration into compact board layouts where a 54‑TFBGA (8×8) package and parallel interface are required.
• High-speed buffering  Buffering and temporary data storage in systems that utilize a 3.0–3.6 V SDRAM supply and require controlled burst access patterns.

Unique Advantages

• Validated SDRAM command set: Comprehensive support for bank activate, burst read/write, auto-precharge, self-refresh and power-down command sequences as detailed in the device documentation.
• 166 MHz (‑6) speed grade: The -6 grade is specified for 166 MHz/CL3 or 133 MHz/CL2 operation, enabling higher throughput modes where required.
• Compact BGA footprint: 54‑TFBGA (8×8) package minimizes board area while providing necessary ball mapping for parallel SDRAM signals.
• Standard voltage range: 3.0–3.6 V supply compatibility with common 3 V SDRAM power domains.
• Detailed timing and operation documentation: Extensive timing diagrams and mode/command descriptions are provided to support deterministic integration and system timing verification.

Why Choose W9825G6JB-6?

The W9825G6JB-6 positions as a straightforward, high-speed SDRAM option when 256 Mbit of parallel volatile memory is required in a compact 54‑TFBGA package. With documented banked architecture, burst modes and support for 166 MHz operation (for the -6 grade), the device is suitable for designs that need controlled burst-oriented memory access and clear timing definitions.

This part is appropriate for engineers specifying a 3.0–3.6 V SDRAM device with a defined ambient range of 0 °C to 70 °C and who require full command/timing documentation to verify system-level behavior and integration.

Request a quote or submit an RFQ for the W9825G6JB-6 to obtain pricing and availability information for your project requirements.