W9825G6JB-6I

The W9825G6JB-6I is a high-speed synchronous dynamic random access memory (SDRAM) device offering 256 Mbit density organized as 16M × 16. It implements a multi-bank architecture and burst-oriented access to deliver up to 166 MHz operation and a reported data bandwidth of up to 166M words per second.

Designed with an LVTTL memory interface and a 54‑TFBGA (8×8) package, the device targets systems that require synchronous DRAM with 3.0–3.6 V supply range, a 5 ns access time, and operation across an industrial temperature window of -40°C to 85°C.

Key Features

• Core / Memory  256 Mbit SDRAM organized as 16M × 16 with internal organization described as 4M × 4 banks × 16 bits for banked access.
• Performance  Supports up to 166 MHz clock frequency and delivers a data bandwidth up to 166M words per second; access time specified at 5 ns.
• Interface  LVTTL memory interface for synchronous control and data transfer.
• Power  Operates from a 3.0 V to 3.6 V supply range as specified in the product data.
• Operational Modes & Control  Burst-oriented access with support for burst read/write, mode register set, auto-precharge, self-refresh, power-down and no-op/deselect commands as described in the device functional description.
• Package & Mounting  54‑TFBGA package (8×8) for compact surface-mount implementation.
• Temperature Range  Guaranteed operation across -40°C to 85°C (TA) for the -6I grade.

Typical Applications

• Embedded systems  Use as system SDRAM where synchronous burst transfers, a 166 MHz clock domain and industrial temperature operation are required.
• Industrial control  Suitable for control and data buffering tasks that need 256 Mbit density and operation from 3.0–3.6 V across -40°C to 85°C.
• High-speed buffering  For applications needing burst-oriented read/write and multi-bank access to sustain data throughput in time-critical interfaces.

Unique Advantages

• High throughput at 166 MHz: Enables sustained data transfers up to the device's specified 166M words per second.
• Banked architecture: Internal organization of 4 banks × 16 bits supports interleaved access and improved effective throughput for burst operations.
• Burst and power-management features: Built-in support for burst read/write, auto-precharge, self-refresh and power-down modes provides flexible performance vs. power trade-offs.
• Industrial temperature support: The -6I grade is specified for -40°C to 85°C, matching designs that require an extended operating range.
• Compact BGA footprint: 54‑TFBGA (8×8) package minimizes PCB area while retaining full SDRAM functionality.
• <strong_Wide supply tolerance: Operation across a 3.0–3.6 V range simplifies integration into 3.3 V system power domains.

Why Choose W9825G6JB-6I?

The W9825G6JB-6I combines a 256 Mbit SDRAM architecture with LVTTL interfacing, a compact 54‑TFBGA package and an industrial operating temperature range to serve designs that need synchronous, burst-oriented memory with predictable timing. Its multi-bank organization and support for standard SDRAM commands and power-management modes provide flexible performance scaling and system-level control.

This device is suited to engineers and procurement teams specifying board-level SDRAM where 166 MHz operation, 5 ns access timing, and a 3.0–3.6 V supply are required. The datasheet-backed feature set supports detailed timing, mode, and power configurations for integration into time-sensitive and temperature-challenged designs.

If you need pricing, lead-time information or a formal quote for W9825G6JB-6I, please request a quote or submit an inquiry with your quantity and delivery requirements.