W9825G6JH-6I

The W9825G6JH-6I from Winbond Electronics is a high-speed synchronous dynamic random access memory (SDRAM) device organized as 4M × 4 banks × 16 bits (16M × 16). The device is a 256 Mbit parallel DRAM supplied in a 54‑lead TSOP II package and is specified for 166 MHz operation (CL3) with a 3.0 V to 3.6 V supply range.

Designed for memory subsystems that require synchronous parallel DRAM functionality, this component supports standard SDRAM command sets and power management modes to enable burst transfers, refresh, and low‑power operation within an industrial temperature range.

Key Features

• Core Architecture Organized as 4M × 4 banks × 16 bits (16M × 16) for a total memory size of 256 Mbit, providing parallel SDRAM data paths for system memory implementations.
• SDRAM Timing and Speed Specified for 166 MHz operation (–6I speed grade) with typical access timing details including 5 ns access time and support for CAS latency settings as defined in the device documentation.
• SDRAM Command and Mode Support Implements standard SDRAM functions including mode register programming, bank activate, burst read/write, auto‑precharge, precharge, self‑refresh, power‑down, and burst stop commands.
• Power and Voltage Operates from a 3.0 V to 3.6 V supply range, with documented power‑down and self‑refresh modes to manage power during idle periods.
• Package Supplied in a 54‑lead TSOP II (0.400", 10.16 mm width) package for board‑level integration where compact TSOP form factors are required.
• Operating Range Rated for an ambient operating temperature range of −40 °C to 85 °C (TA), suitable for a wide range of temperature environments.

Typical Applications

• Personal Computer Memory Subsystems Meets personal computer industrial standard timing profiles for designs that require parallel SDRAM memory arrays at 166 MHz operation.
• Industrial Equipment The −40 °C to 85 °C operating range and standard SDRAM controls make the device suitable for industrial memory applications requiring robust temperature performance.
• Memory Module and System Designs Used in system boards and memory modules that need synchronous parallel DRAM with standard command support (refresh, burst, self‑refresh, power‑down).

Unique Advantages

• 166 MHz (CL3) Rated Operation: Provides a validated speed grade (–6I) for systems targeting 166 MHz SDRAM timing.
• Comprehensive SDRAM Feature Set: On‑device support for mode register programming, burst read/write, auto‑precharge and self‑refresh simplifies system memory control and refresh management.
• Wide Supply Range: 3.0 V to 3.6 V operation accommodates common 3 V SDRAM power rails and design variations.
• Industrial Temperature Support: −40 °C to 85 °C rating supports deployment in temperature‑sensitive and industrial environments.
• Compact TSOP II Packaging: 54‑lead TSOP II footprint (0.400", 10.16 mm) enables dense board layouts while retaining parallel SDRAM pinouts.

Why Choose W9825G6JH-6I?

The W9825G6JH-6I is positioned for designs that require a standard, parallel SDRAM device with documented timing, command support, and industrial temperature capability. Its 256 Mbit organization (16M × 16), 166 MHz rating, and comprehensive SDRAM feature set make it suitable for memory subsystems that rely on synchronous burst transfers, refresh control, and low‑power modes.

Manufactured by Winbond Electronics and detailed in the device datasheet, the W9825G6JH-6I offers a clear specification set (voltage range, timing, package, and operating temperature) to support system integration, validation, and long‑term deployment in industrial and PC‑class memory designs.

Request a quote or submit a sales inquiry to learn about availability, lead times, and pricing for the W9825G6JH-6I.