W9825G6JB-6 TR

The W9825G6JB-6 TR is a high-speed synchronous dynamic RAM (SDRAM) device providing 256 Mbit of volatile memory in a parallel interface. It is organized as 4M × 4 banks × 16 bits and delivers a data bandwidth up to 166 MHz operation.

Designed for systems that require burst-oriented parallel SDRAM, the device supports programmable mode registers, standard SDRAM command set actions (refresh, precharge, self‑refresh, power‑down), and operates from a 3.0 V to 3.6 V supply in a 54‑TFBGA (8×8) package.

Key Features

• Memory Core  256 Mbit SDRAM organized as 4M × 4 banks × 16 bits (equivalent memory organization reported as 16M × 16); burst‑oriented accesses for sequential data transfers.
• Performance  Supports up to 166 MHz clock frequency with access time down to 5 ns; speed grade -6 supports 166 MHz/CL3 or 133 MHz/CL2 as specified in the documentation.
• Interface  Parallel SDRAM interface with standard SDRAM command set including read, write, auto‑precharge, refresh, self‑refresh and power‑down modes.
• Power  Operates from a 3.0 V to 3.6 V supply range and includes self‑refresh and power‑down functions to manage power in standby states.
• Package  54‑TFBGA (8×8) ball grid array package for compact board footprint and surface mounting.
• Operating Conditions  Specified operating temperature range: 0°C to 70°C (TA).
• Timing and Control  Programmable mode register, selectable burst lengths and CAS latencies, with timing examples and command timing detailed in the product documentation.

Typical Applications

• Embedded system memory  Use where a 256 Mbit parallel SDRAM is required for transient data storage and burst transfers.
• Parallel SDRAM subsystems  Suitable for designs that implement standard SDRAM command/control timing and require a 54‑TFBGA package footprint.
• Systems requiring 3.0–3.6 V SDRAM  Applicable in designs specifying a 3.0 V to 3.6 V supply and an operating temperature range of 0°C to 70°C.

Unique Advantages

• High‑speed operation: Enables up to 166 MHz clocking with CL3 timing (‑6 grade) for higher data throughput where available.
• Burst‑oriented architecture: Burst read/write support and banked memory organization optimize sequential data transfers and page accesses.
• Comprehensive SDRAM control: Includes standard SDRAM features such as programmable mode registers, auto‑precharge, refresh and self‑refresh for flexible memory management.
• Compact package: 54‑TFBGA (8×8) package reduces PCB area and supports surface‑mount assembly.
• Wide supply tolerance: 3.0 V to 3.6 V operation provides compatibility with common 3.3 V systems.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

The W9825G6JB-6 TR offers a straightforward, standards‑based SDRAM solution when a 256 Mbit parallel memory device is required. With documented timing, selectable burst modes and command set support, it suits designs that need predictable burst transfers and standard SDRAM control.

This device is appropriate for engineers specifying a 3.0–3.6 V parallel SDRAM in a compact 54‑TFBGA package and targeting an operating range of 0°C to 70°C. The provided documentation details timing diagrams, command sequences and operating examples to aid integration and system validation.

Request a quote or submit an inquiry for pricing and availability using part number W9825G6JB-6 TR to receive further commercial and ordering information.