W9825G2JB75I

The W9825G2JB75I is a 256 Mbit synchronous DRAM (SDRAM) device from Winbond Electronics, organized as 2,097,152 words × 4 banks × 32 bits. It implements standard SDRAM command sets and an LVTTL memory interface for board-level integration.

Designed for applications requiring 256 Mbit of volatile DRAM on a 90-TFBGA (8×13) package, the device offers a 133 MHz clock rating, 5.4 ns access time, and an operating voltage range of 3.0 V to 3.6 V with a specified operating temperature range of -40 °C to 85 °C.

Key Features

• Memory Architecture  Organized as 2,097,152 words × 4 banks × 32 bits to provide a total capacity of 256 Mbit in a single-chip SDRAM configuration.
• SDRAM Core and Command Support  Supports standard SDRAM operations and command sequences including bank activate, burst read/write, auto-precharge, self-refresh, and power-down modes (detailed command and timing behavior documented in the device datasheet).
• Performance  Specified for a 133 MHz clock frequency with an access time of 5.4 ns; the W9825G2JB family is offered in speed grades including -75/75I (PC133/CL3 compliance).
• Interface  LVTTL memory interface for signal-level compatibility with LVTTL logic domains.
• Power  Operates from a 3.0 V to 3.6 V supply range.
• Package  90‑TFBGA (8×13) supplier device package for compact, board-level mounting.
• Environmental / Temperature Range  Rated for operation from -40 °C to 85 °C (TA) for the 75I grade.

Typical Applications

• PC133 memory systems  Suitable for designs that require PC133/CL3-class SDRAM operation as provided by the -75/75I grade.
• Embedded memory subsystems  Provides 256 Mbit of volatile DRAM for board-level memory buffering and system working storage using an LVTTL interface.
• Industrial equipment  The -40 °C to 85 °C operating range supports deployment in extended-temperature environments where a compact BGA package is required.
• Soldered on‑board DRAM  90‑TFBGA packaging enables compact, surface-mounted memory integration in space-constrained designs.

Unique Advantages

• 256 Mbit density in a single device  High-capacity DRAM integration simplifies board-level memory design and reduces the number of discrete memory components required.
• Standard SDRAM command set  Support for burst operations, auto-precharge, self-refresh, and power-down modes enables flexible memory control and power management options.
• PC133/CL3 speed grade available  The -75/75I grade provides PC133/CL3 compliance for designs targeting that timing specification.
• Extended operating temperature  The 75I grade is specified for -40 °C to 85 °C, accommodating extended-temperature applications.
• Compact BGA footprint  90‑TFBGA (8×13) package reduces PCB area for compact system designs.
• LVTTL interface and 3.0–3.6 V supply  Enables straightforward integration with LVTTL logic and common 3.3 V power rails.

Why Choose W9825G2JB75I?

The W9825G2JB75I balances 256 Mbit SDRAM capacity with a compact 90‑TFBGA package and LVTTL interface, making it well suited for board-level memory integration where space, standard SDRAM command support, and extended-temperature operation matter. Its -75I speed grade aligns with PC133/CL3 timing expectations while operating from a 3.0 V to 3.6 V supply and supporting standard SDRAM modes such as burst access and self-refresh.

This device is appropriate for designers and procurement teams needing a predictable SDRAM building block for embedded systems, industrial equipment, or PC133-class memory subsystems where package density and operating temperature range are key design constraints.

Request a quote or submit a parts inquiry to obtain pricing and lead-time information for the W9825G2JB75I.