W9825G6EH-6

The W9825G6EH-6 is a 256 Mbit synchronous dynamic random access memory (SDRAM) device organized as 4M × 4 banks × 16 bits (16M × 16). It implements a parallel SDRAM interface and supports standard SDRAM command sets for burst read/write, auto-precharge, self-refresh and power-down modes.

Designed for systems that require synchronous parallel DRAM at industry-standard PC timing, this -6 speed grade is compliant with 166 MHz/CL3 or 133 MHz/CL2 operation and targets designs needing deterministic SDRAM timing in a 54-TSOP II package with 3.0–3.6 V supply range and 0 °C to 70 °C operating temperature.

Key Features

• SDRAM Core Architecture Organized as 4M × 4 banks × 16 bits (equivalent to 16M × 16), providing 256 Mbit of volatile SDRAM memory.
• Speed Grade / Performance -6 grade: compliant to 166 MHz/CL3 or 133 MHz/CL2; specified clock frequency 166 MHz and access time 5 ns.
• Standard SDRAM Command Set Supports bank activate, burst read/write, burst stop, auto-precharge, precharge, self-refresh and power-down operations (detailed command and timing behavior provided in the device documentation).
• Parallel Memory Interface Parallel SDRAM interface for synchronous, deterministic memory transactions.
• Power and Voltage Rated for 3.0 V to 3.6 V supply operation.
• Package 54-lead TSOP II (0.400", 10.16 mm width) surface-mount package (54-TSOP II).
• Operating Temperature Commercial temperature range: 0 °C to 70 °C (TA).

Typical Applications

• Personal computer memory modules Suited to systems targeting personal computer industrial timing requirements (device documentation notes compliance with PC industrial standard for the listed speed grades).
• Embedded systems with parallel SDRAM Provides a 256 Mbit parallel SDRAM option for designs requiring synchronous burst access and standard SDRAM command functionality.
• Board-level memory expansion Compact 54-TSOP II package enables surface-mount integration where a 256 Mbit SDRAM device is needed.

Unique Advantages

• Industry-standard timing compatibility: -6 speed grade aligns with 166 MHz/CL3 or 133 MHz/CL2 specifications, simplifying use in systems designed to those timing profiles.
• Comprehensive SDRAM feature set: Built-in support for burst modes, auto-precharge, self-refresh and power-down provides the control modes required for typical SDRAM system designs.
• High-density memory in a compact package: 256 Mbit density in a 54-TSOP II footprint supports higher memory capacity without large board area impact.
• Standard parallel interface: Parallel SDRAM interface offers predictable, synchronous data transfers suitable for designs that require deterministic memory timing.
• Broad supply tolerance: 3.0–3.6 V operating range accommodates common 3 V system power rails.

Why Choose W9825G6EH-6?

The W9825G6EH-6 provides a straightforward, standards-based SDRAM solution for designs that require 256 Mbit of synchronous parallel memory with defined PC-compatible timing. Its support for the full SDRAM command set and documented timing examples enables predictable integration into systems that rely on burst transfers and banked memory operation.

This device is appropriate for engineers and procurement teams seeking a 3.0–3.6 V, 54-TSOP II packaged SDRAM component with commercial temperature range and established timing grades (166 MHz/CL3 or 133 MHz/CL2) as documented in the device specification.

If you require pricing, availability or a formal quote for W9825G6EH-6, submit a request for a quote or contact sales to receive product and procurement details.