W9725G6IB-25

The W9725G6IB-25 is a 256 Mbit DDR2 SDRAM device from Winbond Electronics, provided in an 84-WBGA package. It is organized as 16M × 16 with a 4M × 4 banks × 16 bit architecture and implements a parallel DDR2 SDRAM interface.

Designed for systems requiring synchronous DDR2 memory, the device operates up to a 200 MHz clock frequency, supports 1.7 V to 1.9 V supply range, and is specified for operation from 0°C to 85°C, delivering predictable timing and banked memory organization for buffering and general-purpose parallel memory applications.

Key Features

• Core / Memory Architecture 256 Mbit DDR2 SDRAM organized as 16M × 16 and documented as 4M × 4 banks × 16 bit, enabling banked access and burst operations.
• Performance Supports a clock frequency of 200 MHz with an access time of 60 ns and a write cycle time (word page) of 15 ns for deterministic timing behavior.
• Interface Parallel DDR2 SDRAM interface compatible with standard DDR2 command and timing operation as detailed in the device functional description.
• Power Low-voltage operation with a recommended supply range of 1.7 V to 1.9 V to match DDR2 system power domains.
• Package Supplied in an 84-TFBGA / 84-WBGA (8 × 12.5 mm) package suitable for compact board layouts.
• Temperature Range Operating temperature specified from 0°C to 85°C (TC).
• On-Die and Mode Capabilities (Datasheet) Includes DDR2 features such as mode and extended mode register control, on-die termination (ODT) and off-chip driver (OCD) impedance adjustment as described in the device documentation.

Typical Applications

• System Memory Use as parallel DDR2 memory in systems requiring 256 Mbit storage with banked access and burst capabilities.
• Data Buffering Employ for high-throughput buffering where a 200 MHz clock and 16-bit data width meet interface timing needs.
• Embedded Memory Subsystem Integration into embedded designs that require standard DDR2 command functionality, mode register control and self-refresh/power-down support.
• Compact Board Designs Suitable for compact layouts that benefit from an 84-WBGA package footprint.

Unique Advantages

• Banked Memory Organization: 4M × 4 banks × 16 bit architecture enables interleaved and efficient multi-bank access for burst operations.
• Synchronous DDR2 Performance: Rated for up to 200 MHz clock operation with defined access times (60 ns) and write cycle timing (15 ns word page) for predictable system timing.
• Low-Voltage Operation: 1.7 V–1.9 V supply range aligns with DDR2 power domains to reduce system power complexity.
• Compact WBGA Package: 84-WBGA (8 × 12.5 mm) package provides a small footprint for space-constrained PCBs.
• Documented DDR2 Feature Set: Detailed mode register controls, ODT and OCD impedance adjustment, power-down and self-refresh operations are provided in the datasheet for integration and tuning.
• Temperature-Specified Operation: Rated for 0°C to 85°C operation, supporting a range of commercial-temperature applications.

Why Choose IC DRAM 256MBIT PAR 84WBGA?

The W9725G6IB-25 provides a concise DDR2 SDRAM solution with a 256 Mbit capacity, banked architecture and defined timing parameters, making it suitable for designs requiring parallel DDR2 memory with predictable performance. Its low-voltage supply range and compact 84-WBGA footprint support integration into constrained system designs.

With documented DDR2 features such as mode registers, ODT and OCD adjustments and standard command operation detailed in the device documentation, the W9725G6IB-25 is appropriate for engineering teams seeking a specification-driven memory component for buffering, system memory, and embedded parallel memory subsystems.

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