W9464G6KH-5 TR

The W9464G6KH-5 TR from Winbond Electronics is a 64 Mbit DDR SDRAM device with a parallel memory interface and a 4M × 16 organization. It implements standard DDR SDRAM architecture with multiple banks and supports DDR command and timing features described in the device datasheet.

Designed for systems that require compact, low-voltage parallel DDR memory, the device offers a 66‑TSOP II package footprint and operating characteristics suitable for commercial temperature-range designs.

Key Features

• Memory Type & Architecture 64 Mbit DDR SDRAM organized as 4M × 16 with internal banks (1M × 4 banks × 16 bits as documented in the datasheet).
• Parallel DDR Interface Standard parallel DDR interface supporting DDR command set including Mode Register Set, Auto Refresh, Self Refresh and typical read/write commands listed in the datasheet.
• Performance Rated clock frequency up to 200 MHz with specified access time of 55 ns and a write cycle time (word/page) of 15 ns.
• Voltage Low-voltage operation with a supply range of 2.3 V to 2.7 V.
• Package 66‑TSSOP / 66‑TSOP II package (0.400" / 10.16 mm width) for space-efficient mounting.
• Operating Temperature Commercial temperature range: 0°C to 70°C (TA).

Typical Applications

• Parallel DDR memory in embedded systems — Provides 64 Mbit of DDR SDRAM for designs requiring a parallel interface and 16‑bit data organization.
• Compact board-level memory — 66‑TSOP II package supports compact PCB layouts where board space is constrained.
• Low-voltage memory subsystems — 2.3 V–2.7 V supply range for systems designed around lower supply voltages.

Unique Advantages

• Compact form factor: The 66‑TSOP II (0.400", 10.16 mm width) package enables density in space-constrained designs.
• Standard DDR command support: The datasheet documents full DDR SDRAM command set support (activate, precharge, read, write, auto-refresh, self-refresh, mode register operations), enabling predictable integration with DDR controllers.
• 16-bit data organization: 4M × 16 memory organization aligns with 16-bit data buses for straightforward system mapping.
• Low-voltage operation: 2.3 V to 2.7 V supply range reduces power headroom compared with higher-voltage alternatives.
• Deterministic timing parameters: Specified clock frequency (200 MHz), access time (55 ns), and write cycle time (15 ns) facilitate timing analysis and system design.
• Commercial temperature support: Rated for 0°C to 70°C (TA) to match typical commercial-environment deployments.

Why Choose W9464G6KH-5 TR?

The W9464G6KH-5 TR provides a compact, low-voltage DDR SDRAM option with clearly defined timing and electrical parameters for engineers building parallel DDR memory subsystems. Its 4M × 16 organization and support for standard DDR commands make it suitable for designs that require straightforward mapping to a 16‑bit data bus and predictable integration.

Backed by Winbond Electronics and documented in a detailed datasheet, the device is positioned for designers seeking a 64 Mbit DDR SDRAM in a 66‑TSOP II package for commercial temperature-range applications where footprint, low-voltage operation, and defined timing are priorities.

If you would like pricing or availability information for the W9464G6KH-5 TR, request a quote or submit a quote request to evaluate this device for your next design.