W9464G6KH-4 TR

The W9464G6KH-4 TR is a 64 Mbit volatile DRAM device implemented as SDRAM - DDR with a parallel memory interface. It provides a 4M × 16 memory organization and is packaged in a 66-TSSOP / 66-TSOP II form factor for board-level integration.

This device targets applications requiring parallel DRAM storage with defined timing and supply characteristics, offering explicit operating temperature and supply voltage ranges for predictable system design.

Key Features

• Memory Core: 64 Mbit DRAM organized as 4M × 16, offering a parallel interface for word/word-page memory access.
• Technology: SDRAM - DDR architecture, providing double data rate SDRAM behavior as specified.
• Performance: 250 MHz clock frequency and 55 ns access time with a 15 ns write cycle time (word/page) for defined read/write timing.
• Power: Narrow supply voltage range of 2.4 V to 2.7 V to match system power domains and ensure stable operation within specified limits.
• Package & Mounting: Available in a 66-TSSOP (0.400", 10.16 mm width) / 66-TSOP II package for surface mounting and compact board layouts.
• Operating Conditions: Specified operating ambient temperature range of 0°C to 70°C (TA) for standard commercial temperature environments.

Unique Advantages

• Parallel DRAM Organization: The 4M × 16 arrangement and parallel interface simplify mapping for systems that require word-oriented memory access.
• Defined Timing Parameters: Published clock frequency, access time, and write cycle time provide deterministic timing for memory subsystem design and integration.
• Compact TSOP-II Package: The 66-TSSOP / 66-TSOP II package supports space-constrained PCB designs while maintaining standard pinout density.
• Narrow Supply Range: 2.4 V to 2.7 V specification enables compatibility with mid-range DDR power rails and supports controlled power budgeting.
• Commercial Temperature Support: Rated for 0°C to 70°C operation, suitable for consumer and general industrial environments within that range.

Why Choose W9464G6KH-4 TR?

The W9464G6KH-4 TR provides a clearly specified 64 Mbit parallel DRAM solution with SDRAM - DDR technology, fixed timing parameters, and a compact TSOP-II package. Its defined electrical and thermal specifications make it suitable for designs that require predictable memory performance within commercial temperature and voltage envelopes.

This device is appropriate for engineers and procurement teams seeking a documented, board-mountable DRAM component with explicit organization and timing characteristics, supporting straightforward integration into systems that use parallel DRAM memory arrays.

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