W9464G6KH-5I TR

The W9464G6KH-5I TR from Winbond Electronics is a 64 Mbit DDR SDRAM organized as 4M × 16 with a parallel memory interface. It implements DDR SDRAM architecture with internal bank structure described as 1M × 4 banks × 16 bits and is supplied in a 66-TSSOP / 66-TSOP II package.

This device is intended for system designs that require a compact, low-voltage parallel DDR memory solution operating at up to 200 MHz, with documented timing and operational details provided in the manufacturer datasheet.

Key Features

• Memory Type & Technology  Volatile DRAM using DDR SDRAM technology for double-data-rate transfers.
• Memory Organization  64 Mbit capacity arranged as 4M × 16 (datasheet describes internal organization as 1M × 4 banks × 16 bits).
• Interface  Parallel memory interface compatible with standard DDR command set and timing (commands and register operations detailed in the datasheet).
• Performance  Clock frequency rated to 200 MHz with an access time of 55 ns and a word/page write cycle time of 15 ns (timing parameters and waveforms specified in the datasheet).
• Power  Operates from a 2.3 V to 2.7 V supply range.
• Temperature Range  Specified operating ambient temperature: -40°C to 85°C (TA).
• Package  66-TSSOP (0.400", 10.16 mm width) / 66-TSOP II package for high-density PCB mounting.
• Documentation  Comprehensive datasheet includes power-up sequence, command set, timing waveforms, electrical characteristics and system notes for DDR SDRAM integration.

Typical Applications

• Parallel DDR memory subsystems  Use as a 64 Mbit DDR SDRAM component where a parallel memory interface and documented DDR timing are required.
• Embedded system designs  Suitable for embedded systems that need a compact TSOP II package and operation across a -40°C to 85°C ambient range.
• Low-voltage memory designs  Applicable in systems designed around a 2.3 V to 2.7 V DDR supply rail.

Unique Advantages

• Compact 66-TSOP II packaging: 66-TSSOP (0.400", 10.16 mm width) minimizes board area while providing a standard footprint for surface-mount assembly.
• Documented DDR operation: Datasheet provides detailed command functions, timing waveforms, and electrical characteristics to support system integration and validation.
• Balanced performance: 200 MHz clock frequency with 55 ns access time and 15 ns word/page write cycle time delivers defined DDR timing for predictable system behavior.
• Wide ambient range: Specified operation from -40°C to 85°C supports deployment across a broad set of temperature environments.
• Low-voltage operation: 2.3 V to 2.7 V supply range aligns with low-voltage DDR system designs.

Why Choose IC DRAM 64MBIT PAR 66TSOP II?

The W9464G6KH-5I TR is positioned as a straightforward 64 Mbit DDR SDRAM component for designs requiring a parallel DDR memory interface, compact 66-TSOP II packaging, and defined timing characteristics. Its documented organization (4M × 16 / 1M × 4 banks × 16 bits), electrical parameters, and timing details make it suitable for engineers who need verifiable DDR SDRAM behavior for system integration.

This device is appropriate for designs that prioritize a specified 200 MHz clock operation, 2.3–2.7 V supply compatibility, and operation across -40°C to 85°C. The availability of a comprehensive datasheet from the manufacturer supports design validation, timing analysis, and reliable implementation into target systems.

Request a quote or contact sales to discuss availability, lead times, and pricing for the W9464G6KH-5I TR.