W9425G6KH-5 TR

The W9425G6KH-5 TR from Winbond Electronics is a 256Mbit DDR SDRAM device implemented as a 16M × 16 parallel memory offering. The device implements DDR SDRAM architecture with four banks (4 M × 4 BANKS × 16 BITS DDR SDRAM) and is provided in a 66‑TSOP II (66‑TSSOP, 0.400", 10.16mm width) package.

Designed for systems that require parallel DDR memory with a 200 MHz clock capability, the device supports core DDR operations at supply voltages between 2.3 V and 2.7 V and an operating ambient temperature range of 0 °C to 70 °C.

Key Features

• Memory Type & Architecture — DDR SDRAM (SDRAM - DDR) organized as 16M × 16 with four internal banks (4 M × 4 BANKS × 16 BITS DDR SDRAM) for parallel x16 operation.
• Density — 256 Mbit memory capacity suitable for applications requiring moderate embedded DRAM storage.
• Clock & Timing — Rated for 200 MHz input clock frequency with an access time of 55 ns and a write cycle time (word page) of 15 ns.
• Power — Operates from a 2.3 V to 2.7 V supply range.
• Package — 66‑TSOP II / 66‑TSSOP package (0.400", 10.16 mm width) for surface-mount designs.
• Interface — Parallel memory interface (x16 data organization).
• Operating Temperature — Specified ambient range 0 °C to 70 °C (TA).

Typical Applications

• Parallel DDR memory modules — Integration into boards or modules requiring a 256 Mbit x16 DDR SDRAM device in a compact 66‑TSOP II footprint.
• Embedded systems — Systems that require parallel x16 DDR memory with supply operation between 2.3 V and 2.7 V and validated timing at 200 MHz.
• Legacy and industrial designs — Designs that depend on a specified operating ambient range (0 °C to 70 °C) and established DDR command sets as documented in the device datasheet.

Unique Advantages

• Compact package — 66‑TSOP II (66‑TSSOP, 0.400", 10.16 mm) enables higher board density while maintaining a parallel x16 footprint.
• Defined DDR timing — Documented access time (55 ns), write-cycle time (15 ns), and 200 MHz clock support provide measurable performance parameters for system timing design.
• Standard DDR command set — Implements the DDR SDRAM command and mode register structure (as detailed in the datasheet) for predictable control and refresh behavior.
• Wide supply tolerance — Operates across a 2.3 V to 2.7 V supply window to match common DDR system rails.
• Manufacturer-backed documentation — Detailed datasheet content (pinout, functional description, AC/DC characteristics, timing waveforms) supports system-level integration and validation.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The W9425G6KH-5 TR is positioned for designs that require a 256 Mbit DDR SDRAM in a compact 66‑TSOP II package with a parallel x16 interface and clearly specified electrical and timing characteristics. Its 200 MHz clock rating, documented access and write timings, and 2.3 V–2.7 V supply range help engineering teams define timing budgets and power rails with confidence.

This device is suitable for designers seeking a well-documented DDR SDRAM component from Winbond Electronics where package density, predictable timing, and standard DDR control behavior are important for system integration and long-term maintainability.

Request a quote or submit an inquiry for pricing and availability for the W9425G6KH-5 TR by contacting sales to obtain lead times and volume pricing details.