| N/A | | JS27HP1G08SCDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 429 | |
| N/A | | JS27HP2G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 809 | |
| N/A | | JS27HP4G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 28 | |
| N/A | | JS27HP4G08SDDA-45M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 105°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 898 | |
| N/A | | JS27HP4G08SFDA-45 | Jeju Semiconductor Corporation | 4K page 4-bit ECC 256 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 416 | |
| N/A | | JS27HP4G16SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 116 | |
| N/A | | JS27HP8G08SDDA-45 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 85°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,334 | |
| N/A | | JS27HP8G08SDDA-45M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 1.8V | -40°C - 105°C | Clock Frequency: 22.22 MHz Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 696 | |
| N/A | | JS27HU1G08SCDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 907 | |
| N/A | | JS27HU1G08SCDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 64 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,464 | |
| N/A | | JS27HU2G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,243 | |
| N/A | | JS27HU2G08SDDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,625 | |
| N/A | | JS27HU4G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 356 | |
| N/A | | JS27HU4G08SDDA-25M | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 105°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 118 | |
| N/A | | JS27HU8G08SDDA-25 | Jeju Semiconductor Corporation | 2K page 4-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,419 | |
| N/A | | JS27HU8G08SJDA-25 | Jeju Semiconductor Corporation | 2K page 1-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 556 | |
| N/A | | JS27HU8G08SKDA-25 | Jeju Semiconductor Corporation | 2K page 1-bit ECC 128 byte spare | Flash Memory | 63-BGA (9.0x11.0mm) | 3.3V | -40°C - 85°C | Memory Interface: Parallel Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 300 µs | 1,682 | |