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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | AS4C2M32SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2M x 32 Memory Size: 64 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 1,971 | ||
 | AS4C32M16D1-5BAN | Alliance Memory, Inc. | IC DRAM 512MBIT SSTL 2 60FBGA | Memory | 60-FBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,489 | ||
 | AS4C32M16D1-5BANTR | Alliance Memory, Inc. | IC DRAM 512MBIT SSTL 2 60FBGA | Memory | 60-FBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: SSTL_2 Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 637 | ||
 | AS4C32M16D1-5BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 459 | ||
 | AS4C32M16D1-5BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,510 | ||
 | AS4C32M16D1-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 309 | ||
 | AS4C32M16D1-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 976 | ||
 | AS4C32M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 832 | ||
 | AS4C32M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,673 | ||
 | AS4C32M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,549 | ||
 | AS4C32M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 593 | ||
 | AS4C32M16D1A-5TAN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TC) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 492 | ||
 | AS4C32M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TC) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 238 | ||
 | AS4C32M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 473 | ||
 | AS4C32M16D1A-5TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 427 | ||
 | AS4C32M16D1A-5TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,511 | ||
 | AS4C32M16D1A-5TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,117 | ||
 | N/A | AS4C32M16D2-25BANTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 493 | |
 | AS4C32M16D2-25BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 1,441 | ||
 | AS4C32M16D2-25BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Access Time: 400 ps Clock Frequency: 400 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 32M x 16 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 84-TFBGA Qualification: N/A Technology: SDRAM - DDR2 Write Cycle Time Word Page: 15 ns | 303 |
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