F50D1G41LC (2P)

The F50D1G41LC (2P) from ESMT is a 1.8V SPI-NAND Flash memory device organized as 1G × 8 and supplied in an 8-contact WSON surface-mount package. Designed for industrial-grade operation (–40 °C to 85 °C), it delivers cost-effective nonvolatile storage with a low pin-count serial peripheral interface suitable for designs that require compact board-level integration and straightforward density scaling.

Its architecture includes on-chip features such as internal ECC, automatic program/erase, and page-level operations that improve reliability and simplify firmware management in embedded and industrial applications.

Key Features

• Memory Architecture 1.074 Gbit density with organization 1G × 8. Internal memory cell array specified as (128M + 4M) × 8 and data register of (2K + 64) × 8 bytes. Page size is (2K + 64) = 2,112 bytes (2,048-byte data region + 128-byte spare area).
• Serial SPI Interface Serial Peripheral Interface (SPI-NAND) with support for SPI Mode 0 and Mode 3 and command protocols adapted for NAND-specific functions; available width options x1, x2, x4 (note: x2 PROGRAM operation is not defined).
• Performance Clock frequency up to 104 MHz. Read from cell to register with internal ECC in 60 µs. Datasheet lists typical program time of 400 µs and block erase time of 4 ms; specification data also lists a write cycle time (word/page) of 900 µs and an access time of 8 ns.
• Voltage and Power Low-voltage VCC operation at 1.8 V (operating range 1.7 V–1.95 V). Power-up ready time and maximum reset busy time are both specified as 1 ms (maximum).
• Data Integrity & Endurance Internal ECC with correction requirement 1 bit per 512 bytes, bad-block protection, OTP operation and read unique ID. Endurance rated to 100K program/erase cycles with data retention specified at 10 years.
• System Reliability & Protection Hardware data protection features including program/erase lockout during power transitions, automatic program and erase, and reliable CMOS floating-gate technology.
• Package & Temperature Grade Industrial-grade device (–40 °C to 85 °C) supplied in an 8-contact WSON surface-mount package (ordering options include 8 × 6 mm and 6 × 5 mm variants). RoHS compliant.

Typical Applications

• Industrial Control — Nonvolatile code and data storage in control systems operating across –40 °C to 85 °C, where low pin count and board-level compactness are important.
• Embedded Systems — Firmware, boot code and local data storage for embedded devices that benefit from SPI interface simplicity and internal ECC.
• Low-Pin-Count Designs — Applications requiring a minimal signal count while retaining NAND-level capacity and program/erase features, enabling straightforward density upgrades without board redesign.

Unique Advantages

• Low-Voltage Operation: 1.8 V VCC (1.7 V–1.95 V) reduces system power domain complexity for compatible designs.
• Compact, Low-Pin Interface: SPI-NAND serial interface minimizes pin count while providing NAND-style capacity and functions for streamlined board layouts.
• On-Die ECC: Internal ECC (1 bit/512 bytes) improves data reliability and reduces host processing requirements for error handling.
• Industrial Temperature Range: Qualified for operation from –40 °C to 85 °C to meet industrial environment requirements.
• Endurance and Retention: Specified endurance of 100K program/erase cycles and 10-year data retention for long-term reliability.
• Fast System Recovery: Power-up ready time and maximum reset busy time are both 1 ms (maximum), supporting quicker system initialization.

Why Choose F50D1G41LC (2P)?

The F50D1G41LC (2P) positions itself as a practical SPI-NAND solution for engineers who need industrial-temperature nonvolatile storage with low pin count and on-chip ECC. Its combination of a 1.8 V power domain, internal error correction, defined program/erase timing and industrial-grade packaging makes it suitable for embedded and control applications where board space, reliability and straightforward firmware management are priorities.

Backed by standard SPI command protocols and NAND-specific features such as bad-block protection and OTP, this ESMT device is appropriate for designs that anticipate field longevity and future density scaling without major hardware redesign.

Request a quote or contact sales to discuss pricing, lead times and availability for F50D1G41LC (2P).