F50D2G41KA2V

The ESMT F50D2G41KA (2V) is a 2.147 Gbit non-volatile NAND Flash memory device implemented in SPI NAND technology. It provides a 256M × 8 memory organization and is supplied in an 8-contact WSON surface-mount package.

Designed for temperature-critical applications, the device is rated from -40 °C to 105 °C and carries AEC-Q100 qualification for automotive-grade usage. Key electrical and timing characteristics include a 2.5 V supply, 104 MHz clock support, 8 ns access time and a 600 µs word/page write cycle time.

Key Features

• Memory Density and Organization — 2.147 Gbit capacity with a 256M × 8 organization for compact, high-density non-volatile storage.
• Memory Technology — SPI NAND technology that implements NAND Flash non-volatile storage.
• Interface and Timing — Supports a 104 MHz clock and lists a parallel memory interface; access time is specified at 8 ns and word/page write cycle time at 600 µs.
• Power — Single supply specified at 2.5 V.
• Automotive Qualification & Temperature Range — Automotive grade device with AEC-Q100 qualification and an operating temperature range of -40 °C to 105 °C.
• Package and Mounting — Supplied in an 8-contact WSON package optimized for surface-mount assembly.
• Environmental Compliance — RoHS compliant.

Typical Applications

• Automotive Systems — AEC-Q100 qualification and extended temperature range make the device suitable for automotive electronic modules requiring non-volatile storage.
• Industrial Control — Wide operating temperature and robust packaging support embedded storage in industrial and harsh-environment controllers.
• Embedded Memory for Temperature-Critical Designs — Compact 8-contact WSON package and 2.147 Gbit density fit designs where board space and temperature endurance are required.

Unique Advantages

• High Density in a Compact Package: 2.147 Gbit capacity in an 8-contact WSON delivers significant storage without large PCB footprint.
• Automotive-Grade Reliability: AEC-Q100 qualification and -40 °C to 105 °C operating range address reliability demands for automotive and harsh-environment applications.
• Defined Performance Parameters: 104 MHz clock support and 8 ns access time provide clear timing characteristics for system integration.
• Low-Voltage Supply: 2.5 V supply simplifies power-rail planning in many embedded systems.
• RoHS Compliant: Environmentally compliant manufacturing supports regulatory and supply-chain requirements.

Why Choose F50D2G41KA (2V)?

The F50D2G41KA (2V) combines high-density NAND Flash storage with automotive-grade qualification and a wide operating temperature range, making it a practical choice for designers who need robust non-volatile memory in space-constrained assemblies. Its specified clock and timing parameters, defined supply voltage, and compact WSON package simplify system integration and BOM planning.

This device is well suited to engineers and procurement teams designing for automotive or industrial environments that require AEC-Q100-qualified components, consistent timing characteristics, and RoHS compliance. The result is a scalable, reliable memory option for embedded designs operating across a wide temperature range.

Request a quote or contact sales to obtain pricing, availability and lead-time information for the F50D2G41KA (2V).