F50D2G41KA(2V)
| Part Description |
Industrial SPI NAND Flash, 1.8V, -40° to 85°C |
|---|---|
| Quantity | 539 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-contact WSON | Memory Format | NAND Flash | Technology | SPI NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 600 µs | Packaging | 8-contact WSON | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F50D2G41KA(2V) – Industrial SPI NAND Flash, 1.8V, -40° to 85°C
The F50D2G41KA(2V) is an industrial-grade SPI-NAND non-volatile flash memory device offering 2.147 Gbit of storage organized as 256M × 8. It implements a serial peripheral interface (SPI) optimized for low pin-count systems while delivering NAND-style density and program/erase flexibility.
Designed for embedded and industrial applications, this 1-bit memory-cell (SLC) device supports internal ECC, fast SPI clock operation up to 104 MHz, and a wide operating temperature range of -40° to 85°C—providing reliable non-volatile storage in compact surface-mount form factors.
Key Features
- Memory Capacity & Organization 2.147 Gbit total capacity organized as 256M × 8 with a page size of 2,176 bytes (2K + 128) and block size of 64 pages. Plane size is 2 Gb with 2,048 blocks per plane.
- SPI-NAND Architecture Industry-standard SPI interface and command set tailored for NAND functions; supports SPI Mode 0 and Mode 3 operation.
- Performance SPI clock operation up to 104 MHz with transfer characteristics listed at 9.6 ns and an access time of 8 ns; page read time (cell to register, with internal ECC) up to 130 µs (maximum).
- Power & Voltage Single power-supply operation centered on VCC = 1.8V and supported supply range 1.7V–1.95V; includes Deep Power Down mode and fast power-up ready time (maximum 1.5 ms).
- Reliability & Data Integrity User-selectable internal ECC (8-bit correction per 512 bytes), typical endurance of 60K program/erase cycles, and 10-year data retention.
- Program/Erase Typical program time ~400 µs, typical block erase time ~4 ms, with automatic program and erase operations and program/erase lockout during power transitions.
- Package & Mounting Surface-mount 8-contact WSON package (8 × 6 mm) suitable for compact PCB designs and industrial assembly.
- Industrial Temperature Range Rated for operation from -40°C to +85°C for industrial deployments.
Typical Applications
- Compact Embedded Systems — Low pin-count SPI interface and small WSON package make this device suitable for space-constrained controllers and modules requiring non-volatile code and data storage.
- Industrial Control & Automation — Industrial temperature rating and program/erase endurance support firmware storage and field data logging in industrial environments.
- Boot and Firmware Storage — Boot Read capability and internal ECC enable reliable firmware boot and integrity checking in embedded platforms.
- Edge Devices and Gateways — High-density non-volatile storage with SPI connectivity for gateway and edge compute modules where board-level pin count and cost per bit are important.
Unique Advantages
- Low-voltage 1.8V Operation: Supports single-supply operation around 1.8V (1.7V–1.95V), simplifying power-rail requirements in modern low-voltage systems.
- Integrated ECC: User-selectable 8-bit ECC per 512 bytes reduces host overhead for error correction and improves data integrity without external ECC engines.
- High Density in Small Package: 2.147 Gbit capacity in an 8-contact WSON (8 × 6 mm) package delivers NAND-class density with a compact footprint.
- Industrial Reliability: Rated for -40°C to +85°C, with 60K program/erase endurance and 10-year data retention to meet industrial lifecycle requirements.
- Fast SPI Throughput: Up to 104 MHz SPI clock and short transfer/response times enable efficient read and program cycles for responsive embedded storage.
- Power-safe Operations: Power-up ready and max reset busy times of 1.5 ms and program/erase lockout during power transitions enhance robustness during power events.
Why Choose F50D2G41KA(2V)?
The F50D2G41KA(2V) combines high-density SLC NAND storage and SPI convenience to deliver a compact, industrial-grade non-volatile memory solution. Its internal ECC, endurance characteristics, and industrial temperature rating make it well suited to embedded systems that require reliable firmware and data retention in constrained board space.
This device is appropriate for designers seeking a low-pin-count alternative to parallel NAND or SPI-NOR, offering a balance of density, performance, and system-level reliability for industrial and embedded applications.
Request a quote or submit a purchase inquiry to get pricing and lead-time details for the F50D2G41KA(2V) SPI-NAND Flash. Our team will provide configuration, ordering, and availability information to support your design and procurement needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A