F50L2G41KA (2V)
| Part Description |
Ind. -40~105°C, SPI NAND, 3.3V |
|---|---|
| Quantity | 1,141 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-contact WSON | Memory Format | NAND Flash | Technology | SPI NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 2 Gbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 600 µs | Packaging | 8-contact WSON | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 256M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F50L2G41KA (2V) – Ind. -40~105°C, SPI NAND, 3.3V
The ESMT F50L2G41KA (2V) is a 2.147 Gbit serial SPI‑NAND flash memory device built for industrial applications that require non‑volatile code and data storage across a wide temperature range. Based on SPI‑NAND architecture, it combines a compact package and a low‑pin-count serial interface with NAND organization and user‑selectable internal ECC for robust data storage.
This device targets embedded and industrial systems that need high‑density non‑volatile memory with controlled program/erase performance, configurable ECC, and extended operating temperature support for reliable field operation.
Key Features
- Memory Capacity & Organization — 2.147 Gbit total capacity organized as 256M × 8; page size is 2,176 bytes (2K + 128), with blocks of 64 pages and a plane size of 2 Gb (1 plane, 2,048 blocks per plane).
- SPI Interface & Protocol — Industry‑standard serial peripheral interface (SPI) with support for SPI Mode 0 and Mode 3; designed for low pin‑count system integration and boot read capability.
- Performance — Clock frequency up to 104 MHz and loading throughput up to 104 MT/s; data transfer timing includes a transfer rate of 9.6 ns and a page read time (cell to register with internal ECC) up to 130 µs (maximum).
- Program & Erase Timing — Typical program time around 400 µs and typical block erase time around 4 ms; program/erase timings include hardware protections against power transitions.
- Internal ECC & Data Integrity — User‑selectable internal ECC with 8‑bit correction per 512 bytes; first block (Block 0) guaranteed valid at shipment with ECC enabled.
- Reliability & Endurance — Endurance rated to 60K program/erase cycles; uncycled data retention specified as 10 years at 55°C.
- Power & Low Power Modes — Single power supply operation across 2.7 V–3.6 V (VCC 3.3 V), with Deep Power Down mode and power‑up ready time up to 1.5 ms (maximum).
- Package & Industrial Temperature — Available in an 8‑contact WSON surface‑mount package (8 × 6 mm); industrial operating temperature range −40°C to +105°C.
Typical Applications
- Industrial Control & Automation — Non‑volatile storage for firmware, configuration and logging in systems that require operation across −40°C to +105°C.
- Embedded Systems & IoT Gateways — Code and parameter storage in low‑pin‑count designs using the SPI interface and boot read capability.
- Consumer & Professional Electronics — Bulk code or content storage where NAND density and lower cost per bit are advantageous compared to serial NOR alternatives.
- Edge Devices & Gateways — Local data buffering and firmware storage benefiting from internal ECC and robust endurance characteristics.
Unique Advantages
- High Density in a Compact Package — 2.147 Gbit capacity in an 8‑contact WSON (8 × 6 mm) footprint minimizes PCB area while providing large non‑volatile storage.
- Low‑Pin, SPI Integration — Serial peripheral interface reduces interface pin count and simplifies routing compared with parallel NAND implementations.
- Built‑in Error Correction — User‑selectable internal ECC (8‑bit/512‑byte) improves read reliability and reduces system-level ECC requirements.
- Industrial Temperature Range — Qualified for −40°C to +105°C operation to support demanding field environments and extended temperature deployments.
- Fast Boot and Ready Times — Boot read support and a maximum power‑up ready time of 1.5 ms enable quick start‑up in embedded systems.
- Proven NAND Endurance and Retention — 60K P/E cycles and 10‑year data retention (at 55°C) for long operational life in deployed systems.
Why Choose F50L2G41KA (2V)?
The ESMT F50L2G41KA (2V) positions itself as a reliable, high‑density SPI‑NAND option for industrial and embedded designs that require robust non‑volatile storage across a wide temperature range. Its combination of 2.147 Gbit capacity, internal ECC, and industrial temperature rating makes it well suited for firmware and data storage in space‑constrained, low‑pin‑count systems.
Designers looking for NAND‑level density with a serial interface benefit from deterministic program/erase performance, hardware protections during power transitions, and package options optimized for surface‑mount assembly, enabling streamlined BOMs and consistent field reliability.
Request a quote or contact sales for pricing, availability and lead‑time information to integrate the F50L2G41KA (2V) into your next design.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A