F50L2G41KB (2P)

2Gb SPI NAND Flash Ind.
Part Description

Ind. -40~85°C, SPI NAND, 3.3V

Quantity 1,663 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-contact WSONMemory FormatNAND FlashTechnologySPI NAND Flash
Memory Size2 GbitAccess Time8 nsGradeIndustrial
Clock Frequency104 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page600 µsPackaging8-contact WSON
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization256M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F50L2G41KB (2P) – Ind. -40~85°C, SPI NAND, 3.3V

The ESMT F50L2G41KB (2P) is an industrial-grade non-volatile memory device based on SPI NAND Flash technology. It provides 2.147 Gbit of storage organized as 256M × 8 and is supplied in a compact 8-contact WSON surface-mount package.

Designed for industrial applications, the device combines SPI NAND Flash architecture with a parallel memory interface and a 2.5V supply domain, delivering a balance of density, performance (104 MHz clock, 8 ns access time) and tolerance for extended operating temperatures from -40 °C to 85 °C.

Key Features

  • Memory Core: 2.147 Gbit non-volatile NAND Flash organized as 256M × 8 for high-density storage in a small footprint.
  • Technology: SPI NAND Flash technology with a parallel memory interface, providing architecture flexibility for embedded designs.
  • Performance: 104 MHz clock frequency and an 8 ns access time to support responsive code and data storage; measured write cycle time (word/page) is 600 µs.
  • Power: 2.5V nominal voltage supply as specified for the device.
  • Package & Mounting: 8-contact WSON package intended for surface-mount PCB assembly to save board area.
  • Industrial Temperature Range: Qualified for operation from -40 °C to 85 °C to meet harsh-environment requirements.
  • Regulatory Compliance: RoHS compliant.

Typical Applications

  • Industrial Controls: Local non-volatile storage for firmware, configuration and data logging in controllers and PLCs operating across -40 °C to 85 °C.
  • Embedded Storage: High-density code and data storage for embedded systems requiring 2.147 Gbit of NAND Flash in a compact surface-mount package.
  • IoT & Edge Devices: Persistent storage for edge nodes and IoT gateways where industrial temperature tolerance and small package size are important.

Unique Advantages

  • Industrial temperature tolerance: Rated for -40 °C to 85 °C to support deployments in demanding environments.
  • High-density NAND storage: 2.147 Gbit capacity (256M × 8) delivers significant on-board non-volatile memory without increasing PCB footprint.
  • Compact surface-mount package: 8-contact WSON package enables space-constrained board designs and standard SMT assembly.
  • Responsive performance metrics: 104 MHz clock and 8 ns access time combined with measured write cycle timing (600 µs word/page) for predictable behavior.
  • RoHS compliant: Conforms to RoHS requirements for lead-free manufacturing processes.

Why Choose F50L2G41KB (2P)?

The F50L2G41KB (2P) positions itself as a practical, industrial-grade SPI NAND Flash memory option where high-density non-volatile storage, compact packaging and extended temperature range are required. Its combination of 2.147 Gbit capacity, 8-contact WSON surface-mount packaging and documented timing characteristics makes it suitable for embedded and industrial designs that demand reliable storage across a wide temperature range.

Engineers and procurement teams looking for a RoHS-compliant memory device with clear operational limits and straightforward integration will find this part well-suited for firmware storage, data logging and other persistent storage roles in industrial and edge applications.

Request a quote or contact sales to obtain pricing, availability and ordering details for the F50L2G41KB (2P).

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