MT48LC2M32B2P-5:G TR

The MT48LC2M32B2P-5:G TR is a 64 Mbit, x32 SDR SDRAM device from Micron Technology. It implements a 2M × 32 memory organization with four internal banks and a parallel memory interface in an 86-pin TSOP II package.

Designed for systems requiring synchronous, pipelined DRAM with configurable burst lengths and standard timing options, this device provides 200 MHz clock operation, a single 3.3 V supply range, and commercial temperature operation for board-level memory subsystems.

Key Features

• Memory Architecture — 64 Mbit capacity organized as 2M × 32 (512K × 32 × 4 banks) to support banked access and internal row/column addressing.
• SDR SDRAM Core — Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation for column address changes every clock cycle.
• Performance — Speed grade -5 supports a 200 MHz clock (5 ns cycle time) with an access time listed as 4.5 ns in the product specification.
• Programmable Burst & Latency — Programmable burst lengths of 1, 2, 4, 8, or full page and support for CAS latencies (CL) of 1, 2, and 3.
• Refresh & Power Modes — Auto refresh and self-refresh modes are supported, with 64 ms/4096-cycle refresh for commercial operation; note self-refresh availability exceptions noted in device options.
• Signal & Power — LVTTL-compatible inputs and outputs; single 3.3 V ±0.3 V power supply (3.0 V to 3.6 V specified).
• Package — 86-pin TSOP II (0.400", 10.16 mm width) standard package (86-TFSOP), suitable for board-level mounting.
• Operating Range — Commercial temperature range: 0°C to +70°C (TA).

Typical Applications

• PC100-compliant systems — Use in systems targeting PC100 timing and compatibility, leveraging the device’s PC100-compliant speed grade.
• Parallel SDRAM memory subsystems — Board-level memory replacement or integration where a 64 Mbit, x32 parallel SDRAM in an 86-pin TSOP II package is required.
• Designs requiring 3.3 V single-supply operation — Applications needing a single 3.3 V ±0.3 V supply and LVTTL-compatible I/O.
• Commercial-temperature equipment — Systems operating within 0°C to +70°C seeking a standard SDRAM component with auto-refresh and self-refresh features.

Unique Advantages

• Banked memory organization: Four internal banks (512K × 32 × 4) enable hidden row access/precharge and improve access flexibility.
• Flexible burst and latency options: Programmable burst lengths and CAS latencies (1, 2, 3) allow tuning for system timing and throughput requirements.
• High-frequency operation: Support for 200 MHz clocking (speed grade -5) provides deterministic synchronous timing for pipelined memory designs.
• Standard package footprint: 86-pin TSOP II (400 mil) packaging facilitates board-level integration and replacement in existing TSOP II footprints.
• Standardized signaling and power: LVTTL-compatible I/O and a single 3.3 V ±0.3 V supply simplify interface and power rail design.
• Integrated refresh functionality: Auto refresh and self-refresh modes reduce external refresh management overhead in system designs.

Why Choose MT48LC2M32B2P-5:G TR?

The MT48LC2M32B2P-5:G TR combines a standard SDR SDRAM architecture with a compact 86-pin TSOP II package and industry-standard signaling to meet board-level memory requirements. Its 2M × 32 organization, four internal banks, and programmable burst/latency settings provide design flexibility for synchronous, pipelined memory subsystems operating from a single 3.3 V supply.

This Micron SDRAM device is suited to commercial-temperature designs that require predictable PC100-class timing and integrated refresh modes. The device’s package and electrical specifications make it appropriate for engineers specifying or replacing parallel SDRAM components in existing TSOP II footprints.

Request a quote or submit a parts inquiry to obtain pricing, availability, and ordering information for the MT48LC2M32B2P-5:G TR.