MT48LC2M32B2P-5:J

The MT48LC2M32B2P-5:J is a 64 Mbit (2M × 32) SDR SDRAM device in an 86-pin TSOP II package. It implements fully synchronous SDRAM architecture with internal pipelined operation and multiple internal banks to improve sustained data throughput for parallel memory interfaces.

Targeted at commercial-temperature applications, this part is PC100-compliant with a 200 MHz clock frequency (-5 speed grade), single 3.3 V ±0.3 V supply, and support for programmable burst lengths and CAS latencies to match a range of system timing requirements.

Key Features

• Core / Architecture 2M × 32 organization (512K × 32 × 4 banks) providing 64 Mbit DRAM density with internal banks for overlapping row access and precharge.
• SDR SDRAM Performance PC100-compliant, fully synchronous operation with clocked inputs and internal pipelined operation; column address can be changed every clock cycle.
• Timing Options Speed grade -5 supports 200 MHz/5 ns cycle time with CAS latency options of 1, 2, and 3 and programmable burst lengths of 1, 2, 4, 8, or full page.
• Refresh and Power Management Auto refresh and support for 64 ms/4096-cycle refresh; auto precharge and self-refresh mode available (self-refresh not available on AT devices per datasheet notes).
• Interface and I/O Parallel memory interface with LVTTL-compatible inputs and outputs and support for concurrent auto precharge and auto refresh modes.
• Supply and Temperature Single 3.3 V ±0.3 V supply (3.0 V to 3.6 V); commercial operating temperature range 0°C to +70°C (TA).
• Package 86-pin TSOP II (400 mil / 10.16 mm width) plastic package option for board-level mounting in space-constrained designs.

Typical Applications

• PC100-compatible system memory — Use as synchronous DRAM memory in designs targeting PC100 timing and parallel SDRAM interfaces.
• Board-level DRAM for commercial electronics — Provides 64 Mbit density in an 86-pin TSOP II footprint for commercial-temperature embedded systems requiring parallel SDRAM.
• High-throughput buffer memory — Suitable for applications that benefit from internal banking and pipelined column access to maintain steady data flow at PC100 speeds.

Unique Advantages

• Verified PC100 timing: Designed to meet PC100-compliant timing at the -5 speed grade (200 MHz), simplifying integration with legacy PC100-class systems.
• Flexible latency and burst control: CAS latency options (1–3) and programmable burst lengths enable tuning for diverse access patterns and system requirements.
• Internal bank architecture: Four internal banks and pipelined operation allow overlapping row access and precharge to improve effective throughput on sequential accesses.
• Standard TSOP II footprint: The 86-pin TSOP II package (400 mil) provides a compact, industry-standard mounting option for board-level memory implementations.
• Commercial temperature rating: Specified for 0°C to +70°C operation, matching many commercial embedded and system applications.
• Single-supply operation: 3.3 V ±0.3 V supply simplifies power rail design in systems using standard 3.3 V logic.

Why Choose MT48LC2M32B2P-5:J?

The MT48LC2M32B2P-5:J delivers a compact, PC100-compatible SDR SDRAM solution with flexible timing, internal banking, and a proven TSOP II package for board-level integration. Its 64 Mbit density and support for multiple CAS latencies and burst modes make it suitable for commercial-temperature systems that require synchronous parallel DRAM with predictable timing.

This device is well suited to designers maintaining or upgrading PC100-class systems, or to embedded developers who need a straightforward 3.3 V parallel SDRAM option in an 86-pin TSOP II footprint. The combination of synchronous operation, internal pipelining, and refresh features provides a balance of performance and integration for commercial applications.

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