MT48LC2M32B2P-55:G TR
| Part Description |
IC DRAM 64MBIT PAR 86TSOP II |
|---|---|
| Quantity | 740 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5 ns | Grade | Commercial | ||
| Clock Frequency | 183 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC2M32B2P-55:G TR – IC DRAM 64MBIT PAR 86TSOP II
The MT48LC2M32B2P-55:G TR is a 64 Mbit SDR SDRAM organized as 2M × 32 with a parallel memory interface. It implements fully synchronous, pipelined SDRAM architecture with internal banks and programmable burst lengths to support system memory and board-level memory expansion.
Designed for commercial-temperature applications, this device operates from a 3.0 V to 3.6 V supply and targets systems requiring a 183 MHz clock frequency (‑55 speed grade) with fast access characteristics.
Key Features
- Core & memory organization — 64 Mbit capacity arranged as 2M × 32 (512K × 32 × 4 banks) for multi-bank operation and concurrent access management.
- Synchronous SDRAM architecture — Fully synchronous operation with all signals registered on the positive clock edge and internal pipelined operation to allow column address changes every clock cycle.
- Performance & timing — Specified for a 183 MHz clock frequency (‑55 speed grade) with an access time listed as 5 ns and CAS latency (CL) support of 1, 2 and 3.
- Programmable burst and refresh — Supports programmable burst lengths (1, 2, 4, 8 or full page), auto precharge, auto refresh and self refresh modes; 4096-cycle refresh available per datasheet.
- Voltage and I/O — Single 3.3 V ±0.3 V supply (3.0 V–3.6 V) with LVTTL-compatible inputs and outputs.
- Package & thermal — Available in an 86‑pin TSOP II (400 mil, 10.16 mm width) package; commercial operating temperature 0°C to +70°C.
Typical Applications
- Embedded systems — Provides parallel SDRAM storage for board-level memory in commercial-temperature embedded designs that require a 3.3 V supply and standard TSOP II footprint.
- System memory expansion — Used where a 2M × 32 SDRAM organized in four banks is required for buffering and working memory with programmable burst lengths and pipelined access.
- PC/legacy platforms — PC100‑compliant SDRAM timing options make this device suitable for legacy or existing systems expecting standard SDR SDRAM timing and interfaces.
Unique Advantages
- Synchronous pipelined operation: Internal pipelining and bank architecture enable efficient column access every clock cycle, reducing wait states in burst operations.
- Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) allow designers to match data-transfer patterns and optimize throughput.
- Standard voltage domain: Single 3.3 V ±0.3 V supply simplifies power budgeting and compatibility with common 3.3 V logic domains.
- Multiple CAS latency support: CL = 1, 2, 3 options permit trade-offs between latency and system timing requirements.
- Industry-standard package: 86‑pin TSOP II footprint supports compact board-level implementation and established assembly processes.
- Refresh and power modes: Auto refresh and self-refresh options aid data retention and control of power/refresh management in system designs.
Why Choose MT48LC2M32B2P-55:G TR?
The MT48LC2M32B2P-55:G TR offers a straightforward, standards-based SDR SDRAM solution with a 64 Mbit capacity, 2M × 32 organization and four internal banks. Its synchronous, pipelined design and programmable burst capabilities make it suitable for designers who need predictable timing, parallel interface compatibility and a compact 86‑pin TSOP II package.
This device is positioned for commercial-temperature boards and systems that require a 3.3 V supply and PC100-style SDRAM timing. Choosing this Micron SDRAM provides a verified memory building block for products requiring parallel SDRAM with flexible timing and refresh modes.
Request a quote or submit an inquiry to sales for pricing, lead times and availability for the MT48LC2M32B2P-55:G TR.