MT48LC2M32B2P-6 IT:G TR

The MT48LC2M32B2P-6 IT:G TR is a 64 Mbit, x32 SDR SDRAM in a 86‑pin TSOP II package. It implements a 2M × 32 memory organization with a parallel memory interface and synchronous operation tied to the positive edge of the system clock.

This device targets designs requiring parallel SDRAM memory with documented timing and control features, offering a combination of programmable burst operation, multiple CAS latency options and support for industry-temperature operation down to −40 °C.

Key Features

• Core / Architecture  SDR SDRAM architecture with fully synchronous operation; all signals registered on the positive edge of the system clock.
• Memory Organization  64 Mbit capacity arranged as 2M × 32 (512K × 32 × 4 banks as described in the datasheet) to support internal banked operation for row access/precharge hiding.
• Clock and Timing  Clock frequency listed at 167 MHz with an access time of 5.5 ns and support for CAS latencies (CL) of 1, 2 and 3. Programmable burst lengths: 1, 2, 4, 8, or full page.
• Refresh and Power Management  Auto refresh and a self‑refresh mode are supported (self‑refresh not available on AT devices). Includes 4096‑cycle refresh options (64 ms/4096 cycles for commercial and industrial timing noted in the datasheet).
• Interface Compatibility  LVTTL‑compatible inputs and outputs and parallel memory interface for integration into synchronous memory buses.
• Supply Voltage  Single supply operation from 3.0 V to 3.6 V as specified.
• Package  86‑pin TSOP II (0.400", 10.16 mm width) plastic package (86‑TFSOP) suitable for surface mounting.
• Operating Temperature  Specified operating temperature range: −40 °C to +85 °C (TA) for the industrial grade option listed in the specifications.

Typical Applications

• PC100‑class memory systems  PC100‑compliant SDR SDRAM timing options enable use in systems targeting PC100 timing requirements.
• Embedded systems with parallel SDRAM  2M × 32 organization and a parallel interface provide a footprint for legacy or dedicated embedded memory buses.
• Industrial equipment  Operation down to −40 °C supports industrial temperature range designs that require synchronous parallel DRAM.

Unique Advantages

• Flexible timing modes: Multiple CAS latency settings (CL = 1, 2, 3) and programmable burst lengths let designers match memory timing to system requirements.
• Banked internal architecture: Four internal banks (as documented) for pipelined operation and improved row‑access efficiency.
• Broad supply range: Single‑supply operation from 3.0 V to 3.6 V simplifies power sequencing in 3.3 V systems.
• Standard TSOP II footprint: 86‑pin TSOP II package (400 mil/10.16 mm width) enables use in established board layouts and assembly processes.
• Documented refresh and power modes: Auto refresh and self‑refresh capabilities (with documented limitations) support system low‑power and refresh management strategies.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The MT48LC2M32B2P-6 IT:G TR provides a documented parallel SDRAM option with a 64 Mbit x32 organization, flexible timing, and industry‑rated temperature support. Its combination of programmable burst lengths, multiple CAS latencies and banked internal architecture offers designers concrete timing and capacity choices for synchronous memory subsystems.

This device is suited to designs that require a 3.3 V single‑supply SDRAM in a compact 86‑pin TSOP II package and is supported by the manufacturer's datasheet detailing electrical, timing and functional behavior for integration and validation.

If you need pricing, availability or a formal quote for MT48LC2M32B2P-6 IT:G TR, request a quote or contact sales to submit a procurement inquiry.