MT48LC2M32B2P-6:G TR

The MT48LC2M32B2P-6:G TR is a 64 Mbit SDR SDRAM organized as 2M × 32 with a parallel memory interface in an 86-pin TSOP II package. Designed for synchronous operation with internal pipelining and multi-bank architecture, it targets systems that require compact, parallel DRAM memory with programmable burst operation and standard timing options.

Key Features

• Core Architecture — SDR SDRAM with fully synchronous operation; all signals are registered on the positive edge of the system clock.
• Memory Organization — 2M × 32 configuration (512K × 32 × 4 banks) providing 64 Mbit of DRAM capacity with internal banks for hiding row access and precharge operations.
• Performance & Timing — Clock frequency rated at 167 MHz with an access time of 5.5 ns and write cycle time (word/page) of 12 ns; supports CAS latencies (CL) of 1, 2, and 3.
• Burst & Refresh — Programmable burst lengths (1, 2, 4, 8, or full page) plus auto refresh and self-refresh modes as described in the datasheet.
• Voltage & I/O — Single-supply operation across 3.0 V to 3.6 V and LVTTL-compatible inputs/outputs as specified in the datasheet.
• Package — 86-pin TSOP II (0.400", 10.16 mm width) standard package (Supplier device package: 86-TSOP II), optimized for surface-mount board designs with compact footprint.
• Operating Conditions — Commercial operating temperature range of 0°C to +70°C (TA) per the product specification.

Typical Applications

• Parallel SDRAM system memory — For designs requiring a 64 Mbit parallel SDRAM device with standard timing and burst options.
• Embedded controllers and legacy platforms — Fits applications that use a parallel memory interface in an 86-pin TSOP II footprint.
• Memory expansion modules — Suitable where a 2M × 32 organization and 4-bank SDRAM architecture meet capacity and performance needs.

Unique Advantages

• Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) enable designers to match transfer patterns to system requirements.
• Multi-bank architecture: Four internal banks allow overlapping of row access and precharge to improve effective throughput in pipelined systems.
• Standard footprint: 86-pin TSOP II (0.400", 10.16 mm) package supports compact PCB layouts and established surface-mount assembly processes.
• Wide supply tolerance: Operates from 3.0 V to 3.6 V (single-supply), compatible with common 3.3 V system rails.
• Deterministic timing options: Documented clock frequency (167 MHz), access time (5.5 ns), and support for CAS latencies 1–3 help with predictable memory timing and system integration.

Why Choose MT48LC2M32B2P-6:G TR?

The MT48LC2M32B2P-6:G TR delivers a compact, parallel SDRAM solution with a 2M × 32 organization and 4-bank internal architecture for designs that require deterministic, synchronous memory behavior. Its combination of programmable burst lengths, documented timing parameters, and a standard 86-pin TSOP II package makes it suitable for systems that need a straightforward 64 Mbit DRAM component with clear electrical and thermal bounds.

This device is positioned for commercial-temperature designs (0°C to +70°C) running on a 3.0 V–3.6 V supply and benefits engineers seeking a documented SDR SDRAM option from the provided datasheet and product specification set.

If you would like pricing, lead-time information or assistance specifying this part for your design, request a quote or submit an inquiry to discuss availability and ordering.