MT48LC32M8A2BB-7E:G TR

IC DRAM 256MBIT PARALLEL 60FBGA
Part Description

IC DRAM 256MBIT PARALLEL 60FBGA

Quantity 587 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (8x16)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging60-FBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT48LC32M8A2BB-7E:G TR – IC DRAM 256MBIT PARALLEL 60FBGA

The MT48LC32M8A2BB-7E:G TR is a 256 Mbit SDR SDRAM organized as 32M x 8 with a parallel memory interface in a 60-ball FBGA (8×16) package. It is a fully synchronous DRAM device specified for 3.0 V to 3.6 V operation and a commercial ambient temperature range of 0 °C to 70 °C.

Designed for systems that require standard SDRAM timing and parallel access, this device provides synchronous, pipelined operation with internal bank architecture and programmable burst lengths to support predictable, clock-synchronous memory transactions.

Key Features

  • Core Memory Architecture 32M × 8 organization providing 256 Mbit capacity with 4 internal banks for overlapped row access and precharge.
  • SDR SDRAM Operation Fully synchronous operation with all signals registered on the positive clock edge and internal pipelined operation for per-cycle column address changes.
  • Performance & Timing Clock frequency rated at 133 MHz with an access time of 5.4 ns and a write cycle time (word/page) of 14 ns; speed grade -7E corresponds to 133 MHz with 2-2-2 timing per datasheet tables.
  • Programmable Burst & Refresh Programmable burst lengths including 1, 2, 4, 8 or full-page plus auto refresh and a 64 ms / 8192-cycle refresh option listed in the datasheet; self-refresh is provided as a device option in the product family.
  • Power & I/O Single-supply operation at 3.3 V ±0.3 V (3.0 V–3.6 V) with LVTTL-compatible inputs and outputs as documented in the datasheet.
  • Package 60-ball FBGA (8 mm × 16 mm) ball-grid array in a compact footprint suitable for surface-mount assembly.
  • Commercial Temperature Range Specified for operation from 0 °C to +70 °C (TA).

Typical Applications

  • PC100/PC133-compliant systems — Suitable for systems and designs that require PC100 or PC133 SDR SDRAM timing compliance as indicated in the product datasheet.
  • Embedded systems with parallel SDRAM — For designs needing a 256 Mbit parallel SDRAM device with standard synchronous timing and burst capability.
  • Compact, board-level implementations — The 60-ball FBGA (8×16) package supports space-constrained surface-mount designs that require discrete DRAM memory.

Unique Advantages

  • Synchronous, pipelined operation: Enables column-address changes every clock cycle and predictable timing for clocked memory systems.
  • Internal bank architecture: Four internal banks help hide row access and precharge latency for improved access efficiency under burst transactions.
  • Flexible burst and refresh modes: Programmable burst lengths and supported auto-refresh/self-refresh options (per device variant) accommodate a range of memory transaction patterns.
  • Standard voltage and I/O compatibility: Single 3.3 V supply and LVTTL-compatible I/O simplify integration with conventional 3.3 V system logic.
  • Industry-standard package: 60-ball FBGA (8×16) delivers a compact, surface-mount form factor for board-level memory implementations.

Why Choose MT48LC32M8A2BB-7E:G TR?

The MT48LC32M8A2BB-7E:G TR positions itself as a straightforward, standards-based SDR SDRAM device for designs that require 256 Mbit capacity, synchronous pipelined operation, and PC100/PC133 timing compatibility. Its 32M × 8 organization, internal bank architecture, and programmable burst options provide predictable, clock-driven memory behavior for parallel-memory system architectures.

This device is well suited to engineers specifying a compact 60-ball FBGA 3.3 V SDRAM solution within a commercial temperature envelope, offering documented timing parameters and refresh modes for reliable system integration.

If you would like pricing, lead-time or a formal quote for MT48LC32M8A2BB-7E:G TR, please submit a request or contact sales for assistance with ordering and availability.

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