MT48LC32M8A2FB-75 L:D TR

The MT48LC32M8A2FB-75 L:D TR is a 256 Mbit SDR SDRAM organized as 32M × 8 with a parallel memory interface in a 60-ball FBGA package. It implements fully synchronous SDRAM architecture with internal pipelined operation and multiple internal banks for efficient row access and precharge management.

This device targets designs requiring a 256 Mbit volatile memory solution operating at a 133 MHz clock frequency and powered from a 3.0 V to 3.6 V supply, with commercial temperature range support of 0°C to 70°C.

Key Features

• Memory Architecture  256 Mbit capacity organized as 32M × 8 with four internal banks; parallel SDRAM format for direct system memory mapping.
• Performance  PC133-class timing with 133 MHz clock frequency and speed grade -75 (RCD–RP–CL = 3–3–3), enabling CAS latency and refresh timing consistent with PC100/PC133-compliant SDRAM.
• Timing and Access  Access time of 5.4 ns and write cycle time (word/page) of 15 ns; supports programmable burst lengths (1, 2, 4, 8, full page) for flexible data access patterns.
• Synchronous, Pipelined Operation  Fully synchronous device with all signals registered on the positive edge of the system clock and internal pipelining to allow column address changes each clock cycle.
• Refresh and Power Management  Auto refresh and auto precharge features, including concurrent auto precharge and auto refresh modes; self refresh option noted in the datasheet (availability varies by device option).
• Electrical and Thermal  Single-supply operation at 3.0 V to 3.6 V (3.3 V ±0.3 V); commercial operating temperature range 0°C to 70°C.
• Package  60-ball FBGA (8 mm × 16 mm) ball-grid array for high-density board-level mounting.

Typical Applications

• PC100/PC133 memory subsystems  Suitable for systems requiring PC100- and PC133-compliant SDRAM timing and operation.
• Board-level high-density memory  60-ball FBGA package enables compact, board-mounted SDRAM implementations where area efficiency is important.
• Parallel SDRAM memory arrays  32M × 8 organization and programmable burst support make the device appropriate for designs needing 256 Mbit of volatile parallel storage.

Unique Advantages

• Standards-aligned timing: Speed grade -75 provides PC133-class timing (133 MHz, 3–3–3 RCD–RP–CL), delivering predictable SDRAM timing behavior for compatible systems.
• Flexible burst control: Programmable burst lengths (1, 2, 4, 8, full page) enable designers to optimize transfers for sequential or random access workloads.
• Internal bank architecture: Four internal banks and pipelined operation help hide row access/precharge latency and support efficient column access every clock cycle.
• Integrated refresh management: Auto refresh and auto precharge features reduce host controller overhead for refresh cycles and row management.
• Compact FBGA package: 60-ball FBGA (8 × 16 mm) provides a space-efficient mounting option for high-density board designs while preserving full parallel SDRAM functionality.

Why Choose IC DRAM 256MBIT PARALLEL 60FBGA?

The MT48LC32M8A2FB-75 L:D TR offers a straightforward, standards-aligned 256 Mbit SDRAM solution with PC133-class timing, programmable burst control, and internal bank architecture for predictable, pipelined memory access. Its 3.0–3.6 V supply range and commercial temperature rating make it suitable for designs requiring conventional 3.3 V SDRAM operation in the 0°C to 70°C range.

This device is appropriate for engineers specifying a parallel SDRAM device in a compact 60-ball FBGA package where PC100/PC133-compatible timing, refresh automation, and flexible burst operation are required. Sourcing this part from Micron provides access to the documented features and timing parameters necessary for system integration and timing verification.

Request a quote or submit a pricing inquiry to get availability and lead-time information for the MT48LC32M8A2FB-75 L:D TR.