W25N512GVBIT

The W25N512GVBIT is a 3V, 512 M-bit serial SLC NAND flash memory device from Winbond's SpiFlash® family. It provides serial Dual/Quad SPI interface with buffer read and continuous read modes and is organized as 64M × 8 bits in a 24-TFBGA (6×8 mm) package.

Designed for non-volatile storage in embedded designs, the device offers clock operation up to 166 MHz, an access time of 7 ns, and a supply voltage range of 2.7 V to 3.6 V. On-chip protection, ECC status reporting and bad block management features support reliable block and page operations.

Key Features

• Memory Architecture 
  512 Mbit SLC NAND flash organized as 64M × 8 for byte-wide access and large on-board storage capacity.
• Serial Interface 
  SPI interface with Dual and Quad I/O support for flexible signaling modes and command sets.
• Read Modes 
  Buffer read and continuous read modes are supported to optimize sequential data access patterns.
• Performance 
  Supports clock operation up to 166 MHz with an access time of 7 ns for low-latency read transactions.
• Program/Erase 
  128 KB block erase support and program execute commands; typical word/page write cycle time specified at 700 µs.
• Protection and Management 
  Includes protection/configuration/status registers (volatile and OTP-lockable options), bad block management, BBM look-up support, and status registers reporting ECC and program/erase failure flags.
• Voltage and Temperature 
  Supply voltage range 2.7 V to 3.6 V; operating temperature range −40 °C to 85 °C (TA).
• Package 
  24-TFBGA (6×8 mm) supplier device package providing a compact BGA footprint.

Typical Applications

• Embedded Systems 
  Non-volatile serial flash storage for embedded devices requiring SLC NAND memory with Dual/Quad SPI access.
• Firmware and Boot Storage 
  Storage of firmware and boot code using continuous and buffer read modes for sequential code retrieval.
• Block Storage and Data Logging 
  Large-block erase (128 KB) and bad block management support storage of log or large data blocks with on-chip management features.

Unique Advantages

• Large SLC Capacity: 512 Mbit organized as 64M × 8 provides substantial non-volatile storage in a single device.
• Flexible SPI I/O Modes: Dual and Quad SPI support plus buffer/continuous read modes let designers select I/O and read strategies that match system requirements.
• Defined Performance Parameters: 166 MHz clock frequency and 7 ns access time provide clear, measurable timing characteristics for system integration.
• On‑Chip Management: Bad block management, BBM lookup, ECC status reporting and configurable protection registers help maintain data integrity and control memory access.
• Wide Voltage and Temperature Range: 2.7 V–3.6 V supply and −40 °C to 85 °C operating range accommodate a variety of embedded operating environments.
• Compact BGA Package: 24-TFBGA (6×8 mm) package minimizes board footprint while providing a reliable solder-down mounting option.

Why Choose W25N512GVBIT?

The W25N512GVBIT positions itself as a 3V serial SLC NAND flash device offering substantial storage capacity with Dual/Quad SPI access, structured protection registers, and on-chip memory management features such as bad block handling and ECC status reporting. Its documented timing (166 MHz clock, 7 ns access) and defined program/erase behavior (128 KB block erase, 700 µs write cycle time) make integration and performance budgeting straightforward for hardware and firmware teams.

This device is suited to designs that need a compact, high-capacity serial flash solution in a 24-TFBGA package and require explicit configuration and status controls for reliable non-volatile storage across a −40 °C to 85 °C operating range.

Request a quote or contact sales for pricing, lead-time and additional technical information about the W25N512GVBIT.