W25N512GVPIG TR
| Part Description |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|---|---|
| Quantity | 1,599 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 8-WSON (6x5) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 6 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 700 μs | Packaging | 8-WDFN Exposed Pad | ||
| Mounting Method | Non-Volatile | Memory Interface | SPI - Quad I/O | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of W25N512GVPIG TR – IC FLASH 512MBIT SPI/QUAD 8WSON
The W25N512GVPIG TR from Winbond is a 3.0 V, 512 M‑bit serial SLC NAND flash memory in the SpiFlash® family that supports Dual and Quad SPI modes with buffer read and continuous read functionality. It provides a high-density, non-volatile storage option organized as 64M × 8 for embedded code and data storage.
Designed for compact system integration, the device supports up to 166 MHz clocking, a 2.7 V–3.6 V supply range and an operating temperature range of -40 °C to 85 °C. The part is offered in an 8‑WSON (6 × 5 mm) exposed‑pad package and includes on‑device protection and management features drawn from its instruction and status register set.
Key Features
- Memory 512 Mbit SLC NAND flash organized as 64M × 8, providing high-density non-volatile storage.
- Interface Serial SPI with Dual and Quad I/O support for higher throughput and flexible host interfacing.
- Read Modes Buffer Read and Continuous Read modes supported to optimize sequential and sustained read operations.
- Performance Clock frequency up to 166 MHz and a specified access time of 6 ns for read operations; write cycle timing example: 700 µs (word/page).
- Voltage and Power Single‑supply operation across 2.7 V to 3.6 V.
- Package 8‑WSON (6 × 5 mm) exposed pad package for compact board footprint and thermal path.
- Temperature Range Rated for operation from -40 °C to 85 °C (TA).
- Protection & Management On‑chip protection and configuration registers, ECC enable/monitoring bits, bad-block management and BBM lookup features exposed through the instruction set and status registers.
- Command & Control Supports standard, Dual and Quad SPI instruction sets, device reset, JEDEC ID read, block erase, program and page read commands.
Typical Applications
- Firmware and Boot Storage Non‑volatile storage for system firmware and boot code using serial SPI/Quad I/O for efficient code fetch.
- Embedded Data Storage High‑density SLC NAND for storing configuration, calibration and application data in embedded designs.
- External Memory for Microcontrollers Expand system memory via a compact SPI/Quad interface compatible with microcontroller-hosted storage schemes.
Unique Advantages
- High-density SLC NAND: 512 Mbit capacity (64M × 8) delivers substantial non-volatile storage while retaining NAND architecture advantages.
- Flexible, high-speed SPI interface: Dual/Quad I/O and up to 166 MHz clocking enable higher throughput for code and data transfers.
- Advanced on‑device management: Protection registers, ECC enable/status bits and bad-block management reduce host-side management complexity.
- Compact thermal-friendly package: 8‑WSON (6 × 5 mm) with exposed pad supports small form factors and thermal dissipation.
- Wide supply and temperature range: 2.7 V–3.6 V operation and -40 °C to 85 °C rating suit many embedded system environments.
Why Choose IC FLASH 512MBIT SPI/QUAD 8WSON?
The W25N512GVPIG TR combines Winbond's SpiFlash® serial SLC NAND architecture with Dual/Quad SPI and read‑optimized modes to provide a high‑density, configurable non‑volatile memory option for embedded designs. Its documented instruction set, protection registers and ECC-related status bits support reliable storage management directly on the device.
This part is suited to designs that need compact physical footprint, a wide supply and temperature operating window, and serial Quad SPI throughput up to 166 MHz. Supporting block erase, program and read command sets and packaged in an 8‑WSON (6 × 5 mm) exposed‑pad case, it offers a balance of capacity, interface flexibility and device-level management for long-term deployment.
Request a quote or contact sales for pricing, availability and technical inquiries about the W25N512GVPIG TR.