W25N512GVPIR TR

The W25N512GVPIR TR is a 3.0V, 512‑Mbit serial SLC NAND flash memory device featuring Dual/Quad SPI operation, buffer read and continuous read modes. It provides non-volatile storage organized as 64M × 8 and is supplied in a compact 8‑WSON (6×5) package with exposed pad.

Designed for systems that require high-density serial flash, the device combines a Quad I/O SPI interface with a 166 MHz clock capability and a 6 ns access time, while operating from a 2.7 V to 3.6 V supply and across an industrial temperature range of −40°C to 85°C.

Key Features

• Memory Capacity & Organization 512 Mbit SLC NAND organized as 64M × 8, providing non-volatile serial flash storage.
• Serial Interface SPI interface with Dual and Quad I/O support, enabling standard, dual and quad SPI instruction sets for read, program and erase operations.
• Read Modes Buffer read and continuous read modes are supported, selectable via configuration registers to optimize data throughput.
• Performance Supports a clock frequency up to 166 MHz and an access time of 6 ns; typical write/program cycle time (word/page) is 700 µs.
• Voltage Supply Operates from 2.7 V to 3.6 V, suitable for 3V system domains.
• Package 8‑WDFN exposed pad; supplier device package listed as 8‑WSON (6×5 mm) for compact board integration.
• Temperature Range Specified operating ambient temperature range: −40°C to 85°C (TA).
• Protection & Configuration On‑chip protection, configuration and status registers including block protect bits, write‑protect enable, OTP‑lockable bits and an ECC enable bit for configurable data management and protection.

Unique Advantages

• High-density SLC NAND in a small footprint: 512 Mbit storage packaged in an 8‑WSON (6×5) form factor enables compact board designs without sacrificing capacity.
• High-throughput serial interface: Dual/Quad SPI plus support for buffer and continuous read modes and a 166 MHz clock frequency for faster serial data transfer.
• Configurable protection and status registers: Block protect, OTP‑lockable bits and ECC enable options provide flexible data protection and device configuration.
• Wide supply and temperature margins: 2.7–3.6 V supply range and −40°C to 85°C operating range support deployment across typical industrial environments.
• Predictable program timing: Documented write/program cycle time (700 µs) and defined access timing (6 ns) aid system timing and reliability planning.

Why Choose IC FLASH 512MBIT SPI/QUAD 8WSON?

IC FLASH 512MBIT SPI/QUAD 8WSON (W25N512GVPIR TR) positions itself as a compact, high-density serial SLC NAND solution for designs that need non-volatile storage with Dual/Quad SPI access, configurable protection registers and selectable read modes. Its documented timing, voltage range and industrial temperature rating make it suitable for systems where predictable flash behavior and compact packaging are required.

The device’s combination of 512 Mbit capacity, Quad I/O support, configurable protection and small WSON package offers engineers a balance of density, performance and board-level integration for a variety of embedded storage requirements.

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