W25N512GVFIT TR

The W25N512GVFIT TR is a 3.0V, 512 M-bit serial SLC NAND flash memory from Winbond's SpiFlash® series. It implements Dual/Quad SPI with buffer read and continuous read modes to provide serial non-volatile storage in a compact 16‑SOIC package.

This device targets systems that require high-density, non-volatile serial NAND storage with a Quad SPI interface, offering specifications that support fast serial read performance and standard 3.0V operation.

Key Features

• Memory Type & Technology Non-volatile FLASH memory using SLC NAND technology; memory size is 512 Mbit organized as 64M × 8.
• Serial Interface SPI interface with Dual and Quad I/O support for higher parallelism over the serial bus.
• Read Modes Buffer Read and Continuous Read modes are supported to optimize serial read throughput.
• Performance Clock frequency up to 166 MHz and an access time of 6 ns for fast serial access; page/program write cycle time (word/page) specified at 700 µs.
• Voltage & Power Operates from a 2.7 V to 3.6 V supply range (3 V class device).
• Operating Temperature Specified operating ambient temperature range of −40 °C to 85 °C (TA).
• Package Supplied in a 16‑lead SOIC package (0.295" / 7.50 mm width) for standard surface-mount integration.
• Manufacturer & Series Winbond Electronics SpiFlash® family; device ID and instruction set, including JEDEC ID and extended command set, are defined in the datasheet.

Unique Advantages

• High-density serial storage: 512 Mbit capacity in a single 16‑SOIC package provides substantial non-volatile storage while minimizing PCB area.
• Flexible high-speed SPI access: Dual/Quad SPI and up to 166 MHz clocking enable higher bandwidth serial transfers compared with standard single‑I/O SPI.
• Optimized read throughput: Buffer Read and Continuous Read modes reduce overhead for sustained data transfers.
• Industrial temperature support: Specified for −40 °C to 85 °C ambient operation, suitable for temperature-demanding deployments within that range.
• Standard 3V power domain: 2.7 V–3.6 V supply compatibility simplifies integration into 3V system architectures.
• Proven SLC NAND technology: Single-level cell NAND implementation and explicit block/program/erase instruction set support predictable storage behavior as defined in the datasheet.

Why Choose W25N512GVFIT TR?

The W25N512GVFIT TR combines a high-density 512 Mbit SLC NAND array with Dual/Quad SPI connectivity and dedicated buffer/continuous read modes to deliver serial non-volatile storage with enhanced serial read performance. Its 3V supply range, industrial operating temperature window, and standard 16‑SOIC package make it straightforward to integrate into compact embedded designs requiring reliable serial FLASH memory.

Part of Winbond's SpiFlash® series, this device is specified with detailed instruction sets and status/configuration registers in the datasheet, supporting controlled program/erase operations, protection registers, and SPI command compatibility for system-level implementation and long-term product planning.

Request a quote or contact sales for pricing, lead times, and availability for the W25N512GVFIT TR.