W25N512GVFIT

IC FLASH 512MBIT SPI/QUAD 16SOIC
Part Description

IC FLASH 512MBIT SPI/QUAD 16SOIC

Quantity 94 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package16-SOICMemory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size512 MbitAccess Time7 nsGradeIndustrial
Clock Frequency166 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page700 μsPackaging16-SOIC (0.295", 7.50mm Width)
Mounting MethodNon-VolatileMemory InterfaceSPI - Quad I/OMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of W25N512GVFIT – IC FLASH 512MBIT SPI/QUAD 16SOIC

The W25N512GVFIT is a 512 Mbit serial SLC NAND flash memory device with dual/quad SPI support and buffer/continuous read modes. It provides non-volatile storage in a 64M × 8 organization optimized for serial SPI/Quad I/O interfaces.

Designed for embedded and industrial applications that require reliable serial flash storage, the device offers high-speed SPI operation, standard 16-SOIC packaging, and a 2.7 V–3.6 V supply range for straightforward integration into 3V system designs.

Key Features

  • Memory Core 512 Mbit SLC NAND flash organized as 64M × 8, providing non-volatile storage for code and data.
  • Serial Interface Supports SPI with Dual and Quad I/O modes for higher throughput and flexible connection topologies.
  • Read Modes Buffer Read and Continuous Read capabilities as documented in the device instruction set to support efficient data transfer patterns.
  • Performance Clock frequency up to 166 MHz and typical access time of 7 ns for fast serial read access.
  • Program/Erase Operations Supports standard program and erase instructions including Load Program Data, Quad Load Program Data, Program Execute and 128KB Block Erase as defined in the instruction set.
  • Voltage and Power Single-supply operation from 2.7 V to 3.6 V for compatibility with common 3V systems.
  • Package and Mounting Available in a 16-SOIC (0.295", 7.50 mm width) package for through-flow SMT assembly.
  • Operating Temperature Specified for operation from -40°C to 85°C (TA), suitable for a broad range of ambient conditions.
  • Write Timing Word/page write cycle timing listed at 700 µs for program operations.

Typical Applications

  • Embedded Storage Non-volatile program and data storage for microcontroller-based systems that require serial flash memory.
  • Industrial Systems Firmware and lookup table storage in systems operating across -40°C to 85°C where SLC NAND technology is required.
  • Consumer & Connected Devices Storage for code images and data logging in devices that use SPI/Quad I/O serial interfaces.

Unique Advantages

  • Large Serial Capacity: 512 Mbit density in a compact 16-SOIC package enables substantial storage without large footprint penalty.
  • High-speed SPI Operation: Up to 166 MHz clocking and Dual/Quad I/O support accelerate read throughput for bandwidth-sensitive applications.
  • SLC NAND Technology: Single-level-cell NAND architecture provides the device-level characteristics associated with SLC flash as specified.
  • Flexible Read Modes: Buffer Read and Continuous Read modes allow optimized data transfer strategies as defined in the instruction set.
  • Wide Voltage Range: 2.7 V–3.6 V supply operation simplifies integration with common 3V system rails.
  • Industrial Temperature Range: Rated for -40°C to 85°C to support deployment in a variety of ambient environments.

Why Choose W25N512GVFIT?

The W25N512GVFIT combines a 512 Mbit SLC NAND flash core with Dual/Quad SPI and buffer/continuous read modes to deliver a versatile serial storage component for embedded and industrial designs. Its 166 MHz clock capability, defined instruction set (including program, erase and quad load operations), and standard 16-SOIC packaging make it a straightforward choice for systems requiring sizable non-volatile storage in a compact form.

This device is well suited to designers seeking scalable serial flash density, robust read/write operation control via the documented instruction set, and consistent operation across a -40°C to 85°C range with a 2.7 V–3.6 V supply envelope.

Request a quote or contact sales to discuss availability, lead times, and a formal price quotation for the W25N512GVFIT.

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