W25N512GWFIR TR

The W25N512GWFIR TR is a 512 Mbit non-volatile Serial SLC NAND flash memory device in the Winbond SpiFlash® family. It implements serial SPI with Dual and Quad I/O support and provides buffer read and continuous read operation modes.

Designed as a 1.8 V class serial NAND solution, the device offers a 64M × 8 memory organization, a maximum clock frequency of 104 MHz and an access time of 7 ns, providing high-density, low-voltage flash storage for serial flash memory applications.

Key Features

• Memory Type  Non-volatile SLC NAND flash memory with a capacity of 512 Mbit (64M × 8).
• Interface  Supports SPI with Dual and Quad I/O instruction sets for higher throughput and flexible serial connectivity.
• Read Modes  Buffer read and continuous read modes are supported to optimize sequential access patterns.
• Performance  Maximum clock frequency of 104 MHz and a typical access time of 7 ns to support fast serial transfers.
• Program/Erase Timing  Write cycle time (word/page) specified at 700 µs; supports 128 KB block erase (instruction D8h per datasheet).
• Voltage and Power  1.8 V class device with a specified supply range of 1.7 V to 1.95 V.
• Package and Mounting  Available in a 16-SOIC (0.295", 7.50 mm width) package for through-hole-compatible PCB mounting and standard manufacturing flows.
• Operating Temperature  Rated for operation from −40 °C to 85 °C (TA).
• Command and Control  Supports standard SPI instructions including device reset, JEDEC ID read, status/configuration registers, and specialized commands for quad/dual operations and ECC/status reporting (per datasheet instruction set).

Unique Advantages

• High-density SLC NAND: 512 Mbit capacity in a single 16-SOIC package provides compact non-volatile storage while maintaining SLC NAND characteristics.
• Flexible high-speed serial I/O: SPI with Dual/Quad I/O and up to 104 MHz clocking enables increased throughput over standard SPI modes.
• Low-voltage operation: 1.7–1.95 V supply range suitable for 1.8 V system domains, enabling integration into low-voltage designs.
• Optimized sequential reads: Buffer read and continuous read modes reduce host overhead for sequential data transfer patterns.
• Robust program/erase controls: Page write cycle time and 128 KB block erase support give predictable timing for memory management operations.
• Industry-standard package: 16-SOIC package simplifies footprint planning and assembly for board designs that require a small-outline serial flash.

Why Choose IC FLASH 512MBIT SPI/QUAD 16SOIC?

The W25N512GWFIR TR positions itself as a 1.8 V class, high-density serial SLC NAND flash device that combines Quad/Dual SPI flexibility, buffered and continuous read modes, and defined program/erase timing to meet demanding serial storage needs. Its 512 Mbit capacity and 64M × 8 organization deliver substantial on-board non-volatile memory in a compact 16-SOIC footprint.

This device is suited to designs requiring low-voltage operation (1.7–1.95 V), defined timing characteristics (700 µs write cycle time for word/page, 7 ns access time), and support for standard SPI/dual/quad command sets as documented in the device datasheet. The −40 °C to 85 °C operating range supports deployment across a broad thermal envelope.

If you require pricing, lead-time information or a formal quote for W25N512GWFIR TR, submit a request to obtain a quote or additional procurement details.