W25N512GWFIR

The W25N512GWFIR is a 512‑Mbit serial SLC NAND flash memory device from Winbond's SpiFlash® family, offered in a 16‑lead SOIC package. It provides non‑volatile storage organized as 64M × 8 and supports SPI, Dual SPI and Quad SPI interfaces for serial data access.

Designed for embedded systems requiring moderate‑density flash storage, the device targets applications that need low‑voltage operation, buffer/continuous read modes, and performance features such as a 104 MHz clock and 7 ns access time.

Key Features

• Memory Type & Technology 512 Mbit non‑volatile FLASH using SLC NAND architecture, organized as 64M × 8.
• Serial Interface SPI with Dual and Quad I/O support for flexible serial data transfer modes.
• Performance Supports up to 104 MHz clock frequency and 7 ns access time; buffer read and continuous read modes available (per device specification).
• Program/Erase Characteristics Page/program write cycle timing includes a write cycle time (word/page) of 700 µs as specified.
• Low‑Voltage Operation Operates from 1.7 V to 1.95 V supply, enabling low‑voltage system designs.
• Package & Density Supplied in a 16‑lead SOIC (0.295", 7.50 mm width) package, offering 512 Mbit density in a standard footprint.
• Temperature Range Rated operating temperature from −40 °C to 85 °C (TA) for industrial‑range deployments.
• Protection & Management Includes status and configuration registers, protection features and ECC status reporting as detailed in the device documentation.

Typical Applications

• Embedded Storage Non‑volatile program or data storage in systems that require 512 Mbit capacity with SPI/Quad I/O access.
• Firmware/Image Storage Storage of firmware images or code where serial SLC NAND is appropriate and low‑voltage operation (1.7 V–1.95 V) is desired.
• Industrial Electronics Applications operating across −40 °C to 85 °C that need a 16‑SOIC packaged flash memory with buffer/continuous read modes.

Unique Advantages

• 512 Mbit Density in a Compact SOIC: High storage capacity delivered in a standard 16‑SOIC (7.50 mm) package to simplify PCB layout and BOM.
• Flexible Serial I/O: SPI, Dual and Quad SPI support enables selectable throughput options to match system bandwidth needs.
• Low‑Voltage Supply: 1.7 V–1.95 V operation supports low‑power system architectures and reduces power domain complexity.
• Deterministic Timing Data: Published metrics such as 104 MHz clock support and 7 ns access time provide quantifiable performance parameters for system design.
• Operational Temperature Range: Specified −40 °C to 85 °C operation allows use in industrial temperature environments without additional derating notes.

Why Choose W25N512GWFIR?

The W25N512GWFIR positions itself as a compact, mid‑density serial flash memory option that combines SLC NAND technology with SPI/Dual/Quad interface flexibility. Its 512 Mbit capacity, defined timing characteristics and low‑voltage operation make it suitable for embedded designs that require verifiable performance and straightforward integration into 16‑SOIC footprints.

This device is appropriate for engineers and procurement teams specifying non‑volatile storage where known electrical and timing parameters (clock frequency, access time, write cycle time) and an industrial temperature range are required. The included protection and status register features provide control and monitoring useful for system-level memory management.

If you would like pricing, availability or to request a formal quote for W25N512GWFIR, submit a quote request or contact sales through your preferred procurement channel.