W25N512GWEIT TR

The W25N512GWEIT TR is a 512 Mbit serial SLC NAND flash memory device from Winbond's SpiFlash® series. It implements Dual/Quad SPI with buffer read and continuous read modes to provide serial non-volatile storage in a compact package.

Targeted for systems that require 512 Mbit of non-volatile NAND storage with a Quad SPI interface, the device emphasizes low-voltage operation and standard serial flash control via status and configuration registers found in the product datasheet.

Key Features

• Memory Type & Capacity 
  512 Mbit SLC NAND flash organized as 64M × 8 for non-volatile data and code storage.
• Serial Interface 
  Supports SPI with Dual and Quad I/O modes to increase serial throughput where supported by the host controller.
• Read Modes 
  Buffer Read and Continuous Read modes are supported as listed in the device documentation to facilitate sustained serial read operations.
• Performance 
  Clock frequency up to 104 MHz and an access time of 7 ns for SPI transactions and read access performance.
• Program/Erase 
  Write cycle time (word/page) of 700 µs. The device documentation references 128KB block erase instructions (D8h) in the instruction set.
• Voltage & Power 
  Operates around 1.8 V with a specified supply range of 1.7 V to 1.95 V.
• Package 
  Available in an 8-WSON (8 × 6 mm) / 8-WDFN exposed pad package for PCB-mounted applications.
• Temperature Range 
  Specified operating ambient temperature range of −40 °C to 85 °C (TA).
• Protection & Configuration 
  Includes protection, configuration and status registers (protection register, configuration register, multiple status registers) and ECC status bits documented in the datasheet.

Typical Applications

• Embedded storage 
  Non-volatile NAND storage for systems that require 512 Mbit of serial flash memory with SPI/Quad I/O interface.
• Firmware and code storage 
  Stores firmware, lookup tables and code images accessible via SPI, with support for buffer and continuous read modes.
• Data logging and buffering 
  Local non-volatile storage for devices that require page program and block erase operations controlled over serial SPI.

Unique Advantages

• Low-voltage operation: Operates within a 1.7 V to 1.95 V supply range centered on 1.8 V, enabling use in low-voltage system domains.
• High-speed serial I/O: Up to 104 MHz SPI clock and Dual/Quad SPI support increase effective serial throughput where the host supports these modes.
• SLC NAND reliability: Single-level cell NAND organization and documented ECC/status bits provide mechanisms for program/erase monitoring and status reporting.
• Compact package: 8-WSON (8×6 mm) with exposed pad offers a space-efficient footprint for PCB designs.
• Documented control and protection: Comprehensive status, configuration and protection register descriptions in the datasheet enable controlled program/erase and protection schemes.

Why Choose IC FLASH 512MBIT SPI/QUAD 8WSON?

The W25N512GWEIT TR positions itself as a serial SLC NAND flash device that combines 512 Mbit capacity with Dual/Quad SPI and dedicated read modes (buffer and continuous read) for systems that require non-volatile serial storage at low voltage. Its documented status/configuration register set and ECC/status reporting support controlled memory management and monitoring.

This device is suitable for designers needing a 1.8 V serial NAND flash in a compact 8-WSON package and for applications that can take advantage of Quad SPI and the device's program/erase and block management features as defined in the datasheet.

Request a quote or contact sales to discuss pricing, availability and lead time for the W25N512GWEIT TR.