W25N512GWBIT TR

The W25N512GWBIT TR is a 512 Mbit serial SLC NAND flash memory device in Winbond's SpiFlash® family. It implements Dual/Quad SPI with buffer read and continuous read modes to provide a compact, serial non-volatile memory solution.

Designed for embedded systems and compact electronic designs, the device delivers a high-density 64M × 8 memory organization, low-voltage operation and a small 24‑TFBGA package suitable for space-constrained boards.

Key Features

• Memory Core 512 Mbit SLC NAND flash organized as 64M × 8 for serial non-volatile storage.
• Serial Interface SPI interface with Dual and Quad I/O support for higher throughput and flexible bus use.
• Read Modes Buffer Read and Continuous Read modes to optimize sequential read throughput.
• Performance Supports up to 104 MHz clock frequency and an access time of 7 ns.
• Program/Erase Timing Typical write cycle time (word/page) of 700 µs as specified.
• Low-Voltage Operation Specified supply voltage range of 1.7 V to 1.95 V for low-power system integration.
• Package and Form Factor 24‑TFBGA package (6 × 8 mm ball array) for compact board footprint.
• Temperature Range Operating temperature range −40 °C to 85 °C (TA) for a broad range of ambient conditions.
• Device Management and Reliability On-chip protection and configuration registers with features including ECC enable, status registers and bad block management as described in the device instruction set.

Typical Applications

• Embedded systems — Persistent firmware and code storage in controllers and microcontroller-based designs using a serial Quad/Dual SPI interface.
• Industrial equipment — Non-volatile data or lookup table storage in systems operating across −40 °C to 85 °C.
• Networking and communications — Serial flash for boot code and configuration storage where buffer/continuous read and quad I/O improve read throughput.
• Portable and battery‑sensitive devices — Low-voltage (1.7–1.95 V) operation suited to power-conscious designs.

Unique Advantages

• High-density SLC NAND (512 Mbit): Provides substantial non-volatile storage in a single serial device to minimize board-level component count.
• Flexible high-speed SPI: Dual and Quad SPI support with up to 104 MHz clock enables improved data transfer rates compared with standard SPI modes.
• Optimized sequential read: Buffer Read and Continuous Read modes reduce read overhead for sequential data access patterns.
• Low-voltage compatibility: 1.7 V to 1.95 V supply range supports integration into low-voltage systems and designs.
• Compact package: 24‑TFBGA (6×8 mm) package reduces PCB area for space-constrained applications.
• On-chip management features: Protection/configuration registers, ECC enable bit and bad block management support robust memory use and error reporting as detailed in the device documentation.

Why Choose IC FLASH 512MBIT SPI 24TFBGA?

The W25N512GWBIT TR combines single-level cell NAND architecture, Dual/Quad SPI connectivity and optimized read modes to deliver a compact, serial non-volatile memory option for embedded and industrial designs. Its 512 Mbit density in a 24‑TFBGA package, along with low-voltage operation and a wide operating temperature range, make it suitable for space- and power-constrained systems that require reliable serial flash storage.

As part of Winbond Electronics' SpiFlash® family, this device includes on-chip protection and configuration features (including ECC control and status registers) to support controlled program/erase operations and system-level memory management, helping designers integrate robust non-volatile storage into their products.

Request a quote or submit an inquiry for the W25N512GWBIT TR to obtain pricing and availability information for your design requirements.