W25N512GWEIR

The W25N512GWEIR is a 1.8V, 512 M-bit serial SLC NAND flash memory device featuring Dual/Quad SPI I/O and support for buffer read and continuous read modes. It is organized as 64M x 8 and implements standard SPI, dual SPI and quad SPI instruction sets for high-throughput serial access.

Designed for non-volatile storage in compact systems, the device operates from a 1.7 V to 1.95 V supply, supports system clocking up to 104 MHz, and is offered in an 8-WSON (8×6) / 8-WDFN exposed pad package with an operating temperature range of −40 °C to 85 °C.

Key Features

• Memory Type & Capacity  512 Mbit SLC NAND flash memory organized as 64M × 8 for byte-wide data access.
• Serial Interface  SPI with Dual/Quad I/O support, enabling standard SPI, dual SPI and quad SPI instructions per the device instruction set.
• Read Modes  Buffer read and continuous read modes supported to enable efficient sequential data transfers.
• Voltage & Power  Low-voltage operation from 1.7 V to 1.95 V (1.8 V class device).
• Performance  Supports up to 104 MHz serial clock; typical access time listed as 7 ns.
• Write Timing  Word/page write cycle time specified at 700 µs.
• Package  Available in an 8-WDFN exposed pad package; supplier device package listed as 8-WSON (8×6).
• Temperature Range  Industrial ambient operation from −40 °C to 85 °C (TA).
• Data Integrity & Management  On-device protection, configuration and status registers are provided along with bad block management and ECC status reporting as detailed in the device instruction set.

Unique Advantages

• Large SLC NAND Capacity: 512 Mbit density provides substantial non-volatile storage in a single-chip solution.
• Flexible High-Speed SPI I/O: Dual and quad SPI modes plus support for up to 104 MHz clocking improve serial throughput where supported by host controllers.
• Low-Voltage Operation: Narrow 1.7 V–1.95 V supply range enables integration into 1.8 V systems and low-voltage designs.
• Compact Package Options: 8-WSON (8×6) / 8-WDFN exposed pad packages reduce PCB footprint while providing thermal/power handling through the exposed pad.
• Operational Range: −40 °C to 85 °C ambient rating supports wider temperature deployments within the specified range.
• Built-in Data Management: Protection and status registers, bad block management instructions and ECC status reporting aid in maintaining data integrity and tracking program/erase events.

Why Choose W25N512GWEIR?

The W25N512GWEIR positions itself as a compact, low-voltage SLC NAND flash memory with Dual/Quad SPI access and buffering features for efficient serial read operations. It is suitable for designs requiring 512 Mbit of non-volatile storage with SPI/Quad I/O and a defined industrial ambient temperature range.

With on-chip protection and status registers plus explicit bad block management and ECC status reporting, the device provides the configuration and monitoring features engineers need to manage NAND storage at the system level while keeping PCB real estate and supply voltage requirements minimized.

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