W25N512GWEIR TR

The W25N512GWEIR TR is a 1.8V serial SLC NAND flash memory device providing 512 Mbit of non-volatile storage in a 64M × 8 organization. It implements Dual/Quad SPI interfaces with buffer read and continuous read modes for flexible high-throughput serial access.

This device targets applications that require serial non-volatile memory with configurable protection and on-device control over read/write operations, delivered in an 8-pin WSON/WDFN exposed-pad package at industrial temperature range.

Key Features

• Memory Type: SLC NAND non-volatile flash organized as 64M × 8 for a total of 512 Mbit of storage.
• Serial Interface: SPI with Dual and Quad I/O support, enabling standard, dual and quad SPI instruction sets and high-efficiency serial transfers.
• Read Modes: Buffer read and continuous read modes are supported to optimize sequential data access and throughput.
• Performance: Clock frequency up to 104 MHz and access time of 7 ns for fast serial read operations.
• Program/Erase Commands: Supports NAND program and erase operations including 128KB block erase and program execute sequences as defined in the device instruction set.
• Data Protection and Configuration: On-chip protection, configuration and status registers including block protection bits, write-protect enable, ECC enable and other configurable status bits.
• Write Timing: Word/page write cycle time specified at 700 µs for program operations.
• Power Supply: Low-voltage operation from 1.7 V to 1.95 V.
• Package and Mounting: Available in an 8-WDFN exposed pad package and supplied in an 8-WSON (8×6 mm) package case suitable for surface-mount applications.
• Operating Temperature: Specified for −40 °C to 85 °C ambient (TA).

Unique Advantages

• High-density SLC storage: 512 Mbit capacity in a 64M × 8 organization provides substantial non-volatile space while preserving SLC flash characteristics.
• Flexible high-speed serial I/O: Dual and Quad SPI support with up to 104 MHz clocking enables scalable throughput for serial flash systems.
• Optimized sequential reads: Buffer and continuous read modes reduce command overhead for long read sequences.
• Low-voltage operation: 1.7 V–1.95 V supply range supports designs constrained to lower core voltages.
• On-chip protection and ECC control: Multiple protection and configuration registers including ECC enable allow controlled data integrity and block protection management.
• Industrial temperature range: Specified operation from −40 °C to 85 °C for deployment across a range of ambient conditions.

Why Choose W25N512GWEIR TR?

The W25N512GWEIR TR combines serial SLC NAND architecture with Dual/Quad SPI connectivity, buffer/continuous read modes and on-chip protection/configuration registers to deliver a controlled, high-density non-volatile storage option in a compact surface-mount package. Its low-voltage 1.7 V–1.95 V operation, 104 MHz clock capability and specified −40 °C to 85 °C range make it suitable for designs requiring dense serial flash with configurable protection and read performance.

This device is appropriate for engineers and procurement teams specifying 512 Mbit serial NAND flash where detailed control over program/erase behavior, ECC and protection registers is required, and where package size and low-voltage operation are design considerations.

If you would like pricing, lead time or to request a quote for the W25N512GWEIR TR, please submit a quote request or contact sales for availability and ordering information.