W25N512GWPIT TR

IC FLASH 512MBIT SPI/QUAD 8WSON
Part Description

IC FLASH 512MBIT SPI/QUAD 8WSON

Quantity 969 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package8-WSON (6x5)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size512 MbitAccess Time7 nsGradeIndustrial
Clock Frequency104 MHzVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page700 μsPackaging8-WDFN Exposed Pad
Mounting MethodNon-VolatileMemory InterfaceSPI - Quad I/OMemory Organization64M x 8
Moisture Sensitivity LevelN/ARoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNN/AHTS CodeN/A

Overview of W25N512GWPIT TR – IC FLASH 512MBIT SPI/QUAD 8WSON

The W25N512GWPIT TR is a 512 Mbit serial SLC NAND flash memory device featuring Dual/Quad SPI with buffer read and continuous read modes. The device is organized as 64M × 8 and operates from a low-voltage supply of 1.7 V to 1.95 V.

Designed for non-volatile storage in space-constrained designs, the device offers hardware-managed protection and status registers, ECC control bits, and dedicated instructions for block management and program/erase operations. It is available in a compact 8-pin WSON/WDFN package with exposed pad and supports an operating temperature range of −40 °C to 85 °C.

Key Features

  • Memory Type and Density 512 Mbit SLC NAND flash memory organized as 64M × 8 for non-volatile data storage.
  • Interface SPI interface with Dual/Quad I/O support for higher throughput and flexible read modes.
  • Read Performance Supports buffer read and continuous read modes; specified clock frequency up to 104 MHz and access time of 7 ns.
  • Program/Erase Characteristics Page/word program and erase operations supported with a typical write cycle time for word/page of 700 µs.
  • Voltage Low-voltage operation from 1.7 V to 1.95 V for power-sensitive systems.
  • Protection and Management Built-in protection, configuration and status registers, ECC enable/monitoring bits, and bad block management instructions as described in the device instruction set.
  • Package and Temperature Available in an 8-pin WSON (6 × 5 mm) / 8-WDFN exposed pad package; industrial temperature range −40 °C to 85 °C.

Unique Advantages

  • High-density SLC NAND storage: 512 Mbit capacity in a single 8-pin package for compact board-level storage solutions.
  • Low-voltage operation: 1.7 V–1.95 V supply reduces system power requirements where lower I/O voltage is needed.
  • Flexible high-speed interface: Dual/Quad SPI plus buffer and continuous read modes with up to 104 MHz clock support for improved data throughput.
  • Integrated device management: Protection registers, ECC controls and bad block management features simplify storage reliability handling.
  • Compact, thermally assisted package: 8-pin WSON/WDFN with exposed pad supports small form factors and thermal conduction to the PCB.
  • Extended operating range: Rated for −40 °C to 85 °C to cover a broad set of industrial and general-purpose environments.

Why Choose W25N512GWPIT TR?

The W25N512GWPIT TR delivers high-density SLC NAND storage with a low-voltage 1.7 V–1.95 V operating window and a Quad SPI interface for flexible, higher-throughput read operations. Its on-chip configuration and protection registers, ECC controls, and bad block management reduce peripheral control complexity while providing essential storage management capabilities.

This device is well suited for compact, power-conscious embedded designs that require industrial temperature operation and reliable non-volatile storage in a small 8-pin WSON/WDFN package. The combination of SLC NAND architecture, Dual/Quad SPI support, and device management features supports robust integration into designs that need managed flash storage.

Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the W25N512GWPIT TR.

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