W25N512GWYIR TR

The W25N512GWYIR TR is a 512 Mbit serial SLC NAND flash memory device providing non‑volatile storage with Dual/Quad SPI support. It implements a 64M x 8 memory organization and supports buffered and continuous read modes for sustained data throughput.

Designed for systems that require compact, low‑voltage serial flash storage, the device combines a 1.7 V–1.95 V supply range, a 48‑ball WLCSP/48‑UFBGA package, and an industrial operating temperature range of −40 °C to 85 °C.

Key Features

• Memory Type & Technology Non‑volatile SLC NAND flash memory providing 512 Mbit of storage organized as 64M × 8.
• Serial Interface Supports Standard, Dual and Quad SPI (Quad I/O) instruction sets for flexible host interfaces.
• Read Modes Buffer Read and Continuous Read modes are supported for efficient sequential data access.
• Performance Up to 104 MHz clock frequency and a specified access time of 7 ns for fast serial transfers.
• Program/Erase Timing Page program/write cycle time specified (word/page) at 700 µs.
• Voltage & Temperature Operates from 1.7 V to 1.95 V and across an ambient temperature range of −40 °C to 85 °C.
• Package Available in a compact 48‑ball WLCSP (48‑UFBGA) package for space‑constrained designs.
• Protection & Configuration On‑device protection, configuration and status registers including ECC control bits and block protection features documented in the device specification.

Typical Applications

• Embedded storage Non‑volatile serial flash storage for systems requiring compact, low‑voltage memory.
• Firmware and code storage Storing executable code and firmware images using standard, dual or quad SPI read commands.
• Sequential data retention Buffered and continuous read modes enable efficient access for applications with sustained read throughput needs.

Unique Advantages

• High‑density serial SLC NAND: 512 Mbit capacity in a 64M × 8 organization provides substantial on‑board non‑volatile storage without parallel bus complexity.
• Flexible SPI connectivity: Standard, Dual and Quad SPI support enables designers to trade off pin usage and throughput per system requirements.
• Low‑voltage operation: 1.7 V–1.95 V supply range allows integration into low‑voltage system rails.
• Compact WLCSP package: 48‑ball WLCSP/48‑UFBGA packaging minimizes PCB area for space‑constrained designs.
• Read optimization modes: Buffer Read and Continuous Read modes reduce host overhead for sequential data transfers.
• On‑device protection and status control: Protection, configuration and status registers (including ECC and block protect bits) provide programmable device management documented in the datasheet.

Why Choose W25N512GWYIR TR?

The W25N512GWYIR TR positions itself as a compact, low‑voltage serial SLC NAND flash offering 512 Mbit of organized storage with Dual/Quad SPI support and optimized read modes. Its combination of a 104 MHz capable SPI interface, buffered/continuous read options and on‑device protection/configuration registers makes it suitable for designs that need reliable non‑volatile storage with flexible interface options.

With a 48‑ball WLCSP footprint and an industrial temperature rating (−40 °C to 85 °C), the device targets designs requiring small package size, controlled power rails (1.7 V–1.95 V), and documented timing and protection features for system integration and lifecycle support.

Request a quote or submit a pricing inquiry to receive availability and ordering information for the W25N512GWYIR TR. Technical documentation and the full device specification are available in the product datasheet.