AS4C32M16D3-12BCN

The AS4C32M16D3-12BCN is a 512 Mbit volatile DRAM device implemented as DDR3 SDRAM with a 32M × 16 organization and a parallel memory interface. It is supplied in a compact 96‑FBGA (8×13) package intended for board-level integration where a parallel DDR3 memory is required.

Designed to operate with a 1.425 V to 1.575 V supply and an operating temperature range of 0°C to 95°C (TC), the device provides an 800 MHz clock frequency and a specified access time of 20 ns for timing-sensitive designs.

Key Features

• Memory Core DDR3 SDRAM architecture with a total memory size of 512 Mbit organized as 32M × 16 bits.
• Performance 800 MHz clock frequency and an access time of 20 ns to meet DDR3 timing requirements.
• Memory Interface Parallel memory interface with a 16-bit data organization for direct connection to parallel DDR3 controllers.
• Power Operates from a 1.425 V to 1.575 V supply range consistent with DDR3 voltage requirements.
• Package 96‑FBGA package (8×13) listed as 96‑VFBGA for compact board-level mounting and high-density placement.
• Operating Temperature Specified operating temperature range of 0°C to 95°C (TC).
• Memory Type Volatile DRAM device intended for temporary data storage in active systems.

Typical Applications

• Board-Level DDR3 Memory — Provides 512 Mbit of DDR3 storage in designs requiring a parallel 16-bit memory interface and compact FBGA footprint.
• Embedded Systems with Parallel DRAM — Suited to embedded designs that integrate parallel DDR3 memory for working memory or frame buffers.
• Compact Module Designs — The 96‑FBGA (8×13) package supports space-constrained PCBs where board-area efficiency is required.

Unique Advantages

• Parallel DDR3 Organization: 32M × 16 arrangement provides a native 16-bit data path for straightforward parallel integration.
• Defined Timing Performance: 800 MHz clock frequency and a 20 ns access time supply deterministic timing characteristics for system timing analysis.
• Compact FBGA Package: 96‑FBGA (8×13) delivers high density in a small footprint for board-level memory implementations.
• Narrow, Standard DDR3 Voltage Range: 1.425 V to 1.575 V supply requirement aligns with DDR3 power domains for predictable power budgeting.
• Wide Operating Temperature: Rated 0°C to 95°C (TC) to accommodate a range of thermal environments in non-automotive applications.

Why Choose AS4C32M16D3-12BCN?

The AS4C32M16D3-12BCN combines DDR3 signaling at 800 MHz with a 32M × 16 organization to deliver 512 Mbit of volatile memory in a space-efficient 96‑FBGA package. Its specified access time and defined supply voltage range allow engineers to design predictable, timing-conscious memory subsystems.

This device is suited for designers and procurement teams implementing parallel DDR3 memory on compact PCBs who require clear electrical and thermal specifications. The combination of package density, clocking, and temperature rating supports scalable implementations where DDR3 memory density and form factor are primary considerations.

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