MTFC64GASAONS-AIT ES TR
| Part Description |
IC FLASH 512GBIT MMC 153TFBGA |
|---|---|
| Quantity | 368 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 153-TFBGA (11.5x13) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 52 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 153-TFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MTFC64GASAONS-AIT ES TR – IC FLASH 512GBIT MMC 153TFBGA
The MTFC64GASAONS-AIT ES TR is a 512 Gbit non-volatile NAND Flash memory device in a 153-ball TFBGA package (11.5 × 13 mm). The device combines NAND Flash memory with an integrated controller according to the supplied product documentation, providing high-density solid-state storage in a compact BGA footprint.
Designed for embedded storage and boot applications, the device offers multi-gigabit capacity, a 64G × 8 organization, MMC interface listing in the product specifications, and a range of system-level features described in the device documentation such as high-speed interfaces, boot operation, and replay-protected memory block support.
Key Features
- Memory Capacity & Organization — 512 Gbit total capacity organized as 64G × 8 for high-density local storage.
- Memory Technology — Non-volatile NAND Flash allowing persistent data retention without power.
- Interface & Controller — Memory interface listed as MMC in the product specifications; datasheet content references an integrated Universal Flash Storage (UFS) controller and related UFS features.
- Performance & Signaling — Datasheet notes advanced multi-signal interface attributes including differential I/O, support for two lanes, and high-speed gears (Gear 1/2/3) described in the device documentation.
- Power — Main supply VCC operating range 2.7 V to 3.6 V; documentation also references VCCQ2 of 1.7 V to 1.95 V for I/O domains.
- Clock — Clock frequency listed at 52 MHz in the product specifications.
- System Features — Datasheet lists boot operation (high-speed boot), permanent and power-on write protection, sleep mode, background operation, command queuing, cache and reliable write/erase/discard operations.
- Security & Protected Storage — Supports a replay-protected memory block (RPMB) as noted in the device documentation for authenticated or protected data storage.
- Package & Handling — 153-ball JEDEC TFBGA (11.5 × 13 mm) package; documentation lists BGA package with MSL3 handling characteristics and RoHS certification.
- Operating Temperature — Specified operating ambient temperature range: −40 °C to 85 °C (TA).
- Reliability Notes — Documentation references retention testing compliant with AEC-Q100-005 for retention characteristics and package compliance statements in the datasheet.
Typical Applications
- Embedded storage and system boot — High-speed boot operation and integrated controller features support on-board boot and local firmware storage.
- Protected data storage — Replay-protected memory block (RPMB) enables authenticated or secure storage regions for keys or secure counters.
- Compact high-density storage — 512 Gbit capacity in a 153-ball TFBGA package is suitable where board space is constrained but large local storage is required.
Unique Advantages
- High-density storage in a compact package: 512 Gbit organized as 64G × 8 in a 153-TFBGA (11.5 × 13 mm) provides significant capacity with a small PCB footprint.
- Flexible power domains: Wide VCC range (2.7–3.6 V) with documented VCCQ2 range (1.7–1.95 V) supports diverse system power architectures.
- Integrated controller and system features: Datasheet-described UFS controller functionality and features such as boot operation, command queuing, cache and background operations simplify system integration.
- Protected storage support: Built-in RPMB provides a hardware-managed region for authenticated or protected data use cases.
- Documented reliability and package handling: Datasheet lists retention compliance to AEC-Q100-005 and package-level RoHS and MSL3 statements, supporting reliability planning and assembly considerations.
- High-speed signaling options: Documentation references differential I/O and multi-gear multi-lane support, enabling higher throughput modes where implemented.
Why Choose MTFC64GASAONS-AIT ES TR?
The MTFC64GASAONS-AIT ES TR delivers large-format non-volatile NAND Flash storage in a compact 153-TFBGA package with an integrated controller and system-level features documented for boot, secure storage, and high-speed operation. Its supply voltage ranges, documented I/O domain voltages, and specified operating temperature range make it suitable for a variety of embedded storage designs requiring high capacity and protected regions.
Engineers specifying high-density onboard storage will benefit from the device’s capacity, package density, and the controller-level features described in the product documentation, while reliability-relevant notes such as AEC-Q100-005 retention compliance, RoHS, and MSL3 package handling information support long-term design planning.
If you would like pricing or availability information, request a quote or submit a quote request and our team will respond with details and lead-time information.