MTFC64GASAONS-AIT ES TR

IC FLASH 512GBIT MMC 153TFBGA
Part Description

IC FLASH 512GBIT MMC 153TFBGA

Quantity 368 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package153-TFBGA (11.5x13)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size512 GbitAccess TimeN/AGradeIndustrial
Clock Frequency52 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging153-TFBGA
Mounting MethodNon-VolatileMemory InterfaceMMCMemory Organization64G x 8
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MTFC64GASAONS-AIT ES TR – IC FLASH 512GBIT MMC 153TFBGA

The MTFC64GASAONS-AIT ES TR is a 512 Gbit non-volatile NAND Flash memory device in a 153-ball TFBGA package (11.5 × 13 mm). The device combines NAND Flash memory with an integrated controller according to the supplied product documentation, providing high-density solid-state storage in a compact BGA footprint.

Designed for embedded storage and boot applications, the device offers multi-gigabit capacity, a 64G × 8 organization, MMC interface listing in the product specifications, and a range of system-level features described in the device documentation such as high-speed interfaces, boot operation, and replay-protected memory block support.

Key Features

  • Memory Capacity & Organization — 512 Gbit total capacity organized as 64G × 8 for high-density local storage.
  • Memory Technology — Non-volatile NAND Flash allowing persistent data retention without power.
  • Interface & Controller — Memory interface listed as MMC in the product specifications; datasheet content references an integrated Universal Flash Storage (UFS) controller and related UFS features.
  • Performance & Signaling — Datasheet notes advanced multi-signal interface attributes including differential I/O, support for two lanes, and high-speed gears (Gear 1/2/3) described in the device documentation.
  • Power — Main supply VCC operating range 2.7 V to 3.6 V; documentation also references VCCQ2 of 1.7 V to 1.95 V for I/O domains.
  • Clock — Clock frequency listed at 52 MHz in the product specifications.
  • System Features — Datasheet lists boot operation (high-speed boot), permanent and power-on write protection, sleep mode, background operation, command queuing, cache and reliable write/erase/discard operations.
  • Security & Protected Storage — Supports a replay-protected memory block (RPMB) as noted in the device documentation for authenticated or protected data storage.
  • Package & Handling — 153-ball JEDEC TFBGA (11.5 × 13 mm) package; documentation lists BGA package with MSL3 handling characteristics and RoHS certification.
  • Operating Temperature — Specified operating ambient temperature range: −40 °C to 85 °C (TA).
  • Reliability Notes — Documentation references retention testing compliant with AEC-Q100-005 for retention characteristics and package compliance statements in the datasheet.

Typical Applications

  • Embedded storage and system boot — High-speed boot operation and integrated controller features support on-board boot and local firmware storage.
  • Protected data storage — Replay-protected memory block (RPMB) enables authenticated or secure storage regions for keys or secure counters.
  • Compact high-density storage — 512 Gbit capacity in a 153-ball TFBGA package is suitable where board space is constrained but large local storage is required.

Unique Advantages

  • High-density storage in a compact package: 512 Gbit organized as 64G × 8 in a 153-TFBGA (11.5 × 13 mm) provides significant capacity with a small PCB footprint.
  • Flexible power domains: Wide VCC range (2.7–3.6 V) with documented VCCQ2 range (1.7–1.95 V) supports diverse system power architectures.
  • Integrated controller and system features: Datasheet-described UFS controller functionality and features such as boot operation, command queuing, cache and background operations simplify system integration.
  • Protected storage support: Built-in RPMB provides a hardware-managed region for authenticated or protected data use cases.
  • Documented reliability and package handling: Datasheet lists retention compliance to AEC-Q100-005 and package-level RoHS and MSL3 statements, supporting reliability planning and assembly considerations.
  • High-speed signaling options: Documentation references differential I/O and multi-gear multi-lane support, enabling higher throughput modes where implemented.

Why Choose MTFC64GASAONS-AIT ES TR?

The MTFC64GASAONS-AIT ES TR delivers large-format non-volatile NAND Flash storage in a compact 153-TFBGA package with an integrated controller and system-level features documented for boot, secure storage, and high-speed operation. Its supply voltage ranges, documented I/O domain voltages, and specified operating temperature range make it suitable for a variety of embedded storage designs requiring high capacity and protected regions.

Engineers specifying high-density onboard storage will benefit from the device’s capacity, package density, and the controller-level features described in the product documentation, while reliability-relevant notes such as AEC-Q100-005 retention compliance, RoHS, and MSL3 package handling information support long-term design planning.

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