THGAMRG9T23BAIL

THGAMRG9T23BAIL is an e•MMC™ memory module integrating advanced NAND flash and a controller as a multi-chip module. It implements the industry-standard JEDEC / MMCA Version 5.1 MMC protocol with support for 1‑I/O, 4‑I/O and 8‑I/O modes for standard e‑MMC interfacing.

The device provides 512 Gbit (64GB) of non-volatile NAND storage in a compact 153-ball WFBGA package, offering multiple performance modes and defined operating and power characteristics suitable for designs requiring a standard e‑MMC storage solution.

Key Features

• Interface — JEDEC / MMCA Version 5.1 e•MMC™ interface with 1‑I/O, 4‑I/O and 8‑I/O mode support for compatibility with standard MMC hosts.
• Memory Density & Organization — 512 Gbit total capacity organized as 64G × 8 (64GB logical density).
• NAND Technology — Uses BiCS3 NAND flash (2 × 256Gbit) integrated with a controller as a multi‑chip module.
• Performance Modes — Sequential read/write throughput (typical) by mode: SDR 52MHz ~ Read 45 / Write 40 MB/s; DDR 52MHz ~ Read 85 / Write 80 MB/s; HS200 ~ Read 175 / Write 150 MB/s; HS400 ~ Read 330 / Write 230 MB/s.
• Power Supply — VCC = 2.7 V to 3.6 V and VCCQ = 1.7 V to 1.95 V as specified for device operation.
• Operating Current (RMS) — Typical maximum RMS currents by mode: SDR 52MHz Iccq 105 mA / Icc 75 mA; DDR 52MHz Iccq 115 mA / Icc 75 mA; HS200 Iccq 175 mA / Icc 80 mA; HS400 Iccq 265 mA / Icc 85 mA.
• Package — 153‑ball WFBGA (P‑WFBGA153‑1113‑0.50) with package footprint 11.5 mm × 13 mm and maximum height 0.8 mm; typical mass 0.17 g.
• Temperature Range — Operating temperature: −25 °C to 85 °C; Storage temperature: −40 °C to 85 °C.
• Pin and Signal Notes — Detailed pin assignment available for DAT[0:7], CMD, CLK, VCC, VCCQ, VSS, VSSQ and reset (RST_n); NC, RFU and VSF pins are handled per datasheet guidance.

Unique Advantages

• High-density storage: 512 Gbit (64GB) capacity in a single e‑MMC module reduces the need for additional external flash devices.
• Standard e‑MMC interface: JEDEC/MMCA v5.1 support with 1/4/8 I/O modes simplifies host integration using the industry standard MMC protocol.
• Multi‑chip integration: NAND plus controller assembled as a multi‑chip module streamlines BOM and board integration compared to discrete solutions.
• Multiple performance tiers: Operates across SDR, DDR, HS200 and HS400 modes with documented typical throughput values to match application bandwidth needs.
• Compact package: 153‑WFBGA (11.5 × 13 mm) provides a small board footprint while delivering large capacity and performance.
• Defined operating envelope: Specified VCC/VCCQ ranges and operating temperature limits provide clear parameters for system power and thermal design.

Why Choose THGAMRG9T23BAIL?

THGAMRG9T23BAIL combines 512 Gbit of BiCS3 NAND flash and an integrated controller in a JEDEC‑compliant e‑MMC module, offering multiple interface modes and documented performance up to HS400. The module’s compact 153‑ball WFBGA package, specified power rails, and operating temperature range make it suitable where high-density, standard-interface non‑volatile storage is required.

This product is appropriate for designs that need a high-capacity, integrated e‑MMC solution with clear electrical and mechanical specifications, enabling predictable system integration and long-term supply continuity backed by manufacturer documentation.

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