THGBMHG9C8LBAWG

IC FLASH 512GBIT EMMC 153WFBGA
Part Description

IC FLASH 512GBIT EMMC 153WFBGA

Quantity 55 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerKioxia America, Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package153-WFBGA (11.5x13)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size512 GbitAccess TimeN/AGradeIndustrial
Clock Frequency52 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging153-WFBGA
Mounting MethodNon-VolatileMemory InterfaceeMMCMemory Organization64G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of THGBMHG9C8LBAWG – IC FLASH 512GBIT eMMC 153WFBGA

The THGBMHG9C8LBAWG from Kioxia America, Inc. is a 512 Gbit non-volatile FLASH NAND memory device in the e•MMC™ series. It provides high-density embedded flash storage with a defined memory organization and an eMMC interface.

Key device specifics include a 64G × 8 memory organization, a 52 MHz clock frequency, an operating voltage range of 2.7 V to 3.6 V, and an operating temperature range of -40°C to 85°C, all packaged in a 153-WFBGA (11.5×13) supplier device package.

Key Features

  • Memory Type & Technology Non-volatile FLASH - NAND memory providing a total capacity of 512 Gbit.
  • Memory Organization Organized as 64G × 8, supporting byte-wide memory organization.
  • Interface & Clock eMMC memory interface with a specified 52 MHz clock frequency.
  • Voltage Supply Wide supply range of 2.7 V to 3.6 V to match common system power rails.
  • Operating Temperature Specified operating temperature range of -40°C to 85°C (TA).
  • Package 153-WFBGA package case with supplier device package dimensions of 11.5×13 mm for compact board-level integration.
  • Manufacturer & Series Part of the e•MMC™ series from Kioxia America, Inc., identified by part number THGBMHG9C8LBAWG.

Unique Advantages

  • High-density storage: 512 Gbit capacity enables consolidation of large datasets on a single memory device.
  • Defined memory architecture: 64G × 8 organization provides clear byte-wide memory mapping for system design.
  • Standard eMMC interface: eMMC interface and a 52 MHz clock frequency support integration with hosts that accept eMMC devices.
  • Flexible power envelope: 2.7 V to 3.6 V supply range allows operation across common system voltage rails.
  • Extended temperature capability: Rated for operation from -40°C to 85°C (TA) to address environments within that range.
  • Compact package footprint: 153-WFBGA (11.5×13) packaging supports high-density board layouts.

Why Choose IC FLASH 512GBIT EMMC 153WFBGA?

The IC FLASH 512GBIT EMMC 153WFBGA (THGBMHG9C8LBAWG) combines a high 512 Gbit NAND flash capacity with an eMMC interface, a 64G × 8 memory organization, and defined electrical and environmental specifications. Its supply voltage range (2.7 V–3.6 V), 52 MHz clock frequency, and -40°C to 85°C operating range make the device suitable for designs that require large non-volatile storage within those electrical and temperature limits.

With a compact 153-WFBGA (11.5×13) package and manufacturer support from Kioxia America, Inc., this device is positioned for use where a high-density eMMC flash component with the listed specifications is required.

Request a quote or submit a product inquiry to evaluate THGBMHG9C8LBAWG for your design requirements.

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