W25N512GVEIR TR

The W25N512GVEIR TR is a 3V, 512 M-bit serial SLC NAND flash memory in Winbond's SpiFlash® family providing Dual/Quad SPI connectivity. It offers buffer read and continuous read modes plus support for standard SPI instructions and advanced command sets for block erase and program operations.

With a 64M × 8 memory organization, up to 166 MHz clocking, and a compact 8-WDFN/8-WSON package, this device is intended for designs requiring non-volatile 512 Mbit storage with configurable protection and ECC support.

Key Features

• Memory Type & Capacity  512 Mbit SLC NAND flash organized as 64M × 8 for non-volatile data and code storage.
• Serial Interface  SPI with Dual and Quad I/O support to increase throughput and reduce bus time; includes standard SPI instruction set plus Quad SPI instructions.
• Read Modes  Buffer Read and Continuous Read modes are supported to streamline high-speed read operations and sustained data transfer.
• Performance  Supports up to 166 MHz clock frequency with an access time of 6 ns for responsive read access.
• Program / Erase Operations  Supports page program and a 128 KB block erase command, with a listed write/program cycle time of 700 µs for word/page operations.
• Protection & Reliability  Multiple protection, configuration and status registers including writable/OTP-lockable bits and an ECC enable bit plus status registers for ECC and program/erase reporting.
• Supply & Temperature  Operates from 2.7 V to 3.6 V and is specified for an ambient temperature range of −40 °C to 85 °C (TA).
• Package  Available in an 8-WDFN exposed pad format (supplier device package: 8-WSON, 8 × 6 mm) for compact board mounting.

Typical Applications

• Firmware and Code Storage  Non-volatile SLC NAND capacity and SPI/Quad I/O make the device suitable for storing boot code and firmware images.
• Data Logging and Persistent Data  512 Mbit of storage and block program/erase support allow use for event logging and non-volatile data retention.
• Embedded System Storage  Compact 8-WSON package and 2.7–3.6 V operation fit space- and power-constrained embedded designs requiring reliable flash storage.

Unique Advantages

• 512 Mbit SLC Density: Provides large non-volatile capacity in a single serial flash device to consolidate storage needs without additional parts.
• High-Speed SPI/Quad I/O: Dual/Quad SPI support with up to 166 MHz clocking reduces read latency and accelerates data transfers compared to single-bit SPI.
• Configurable Protection and ECC: Protection registers, OTP-lockable bits, and ECC enable/status bits allow designers to balance data integrity and security requirements.
• Compact Package: 8-WDFN/8-WSON (8 × 6 mm) package enables small-board footprints and exposes pad for thermal/mechanical mounting.
• Wide Supply and Temperature Range: 2.7–3.6 V supply and −40 °C to 85 °C ambient rating support a broad set of operating conditions.

Why Choose W25N512GVEIR TR?

The W25N512GVEIR TR combines SLC NAND density with flexible Dual/Quad SPI interfaces, buffer/continuous read modes, and configurable protection/ECC features to address designs that require reliable 512 Mbit non-volatile storage and high-throughput serial access. Its performance parameters—up to 166 MHz clocking, 6 ns access time, and defined program/erase operations—make it suitable for systems that need deterministic flash behavior.

This device is well suited to engineers specifying serial flash for embedded storage, firmware retention, or data logging where compact packaging, supply flexibility, and register-level configurability are important for long-term integration and maintainability.

If you need pricing or availability information, request a quote or contact sales to submit a quote request for the W25N512GVEIR TR.