 | | AS4C16M16SB-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,516 | |
 | | AS4C16M16SB-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,243 | |
 | | AS4C16M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,744 | |
 | | AS4C16M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 680 | |
 | | AS4C16M16SB-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 175 | |
 | | AS4C16M16SB-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 629 | |
 | | AS4C16M32MD1B-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 1,455 | |
 | | AS4C16M32MD1B-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 1,208 | |
 | | AS4C16M32MSB-6BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 338 | |
 | | AS4C16M32MSB-6BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 1,254 | |
 | | AS4C16M32SB-6BCN | Alliance Memory, Inc. | SDR, 512MB, 16M X 32, 3.3V, 54-B | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 32 Write Cycle Time Word Page: 12 ns | 562 | |
 | | AS4C16M32SB-6BCNTR | Alliance Memory, Inc. | SDR, 512MB, 16M X 32, 3.3V, 54-B | Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 16M x 32 Write Cycle Time Word Page: 12 ns | 298 | |
 | | AS4C16M32SC-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 967 | |
 | | AS4C16M32SC-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,237 | |
 | | AS4C1G32MD4V-046BIN | Alliance Memory, Inc. | IC DRAM 32GBIT LVSTLE 200FBGA | Memory | 200-FBGA (10x15) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 4.266 GHz Memory Interface: LVSTLE_06 Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,283 | |
 | | AS4C2G16D4-62BCN | Alliance Memory, Inc. | DDR4, 32GB, 2G X 16, 1.2V, 96-BA | Memory | 96-FBGA (7.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 2G x 16 Write Cycle Time Word Page: N/A | 623 | |
 | | AS4C2G16D4-62BCNTR | Alliance Memory, Inc. | DDR4, 32GB, 2G X 16, 1.2V, 96-BA | Memory | 96-FBGA (7.5x13) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 2G x 16 Write Cycle Time Word Page: N/A | 73 | |
 | | AS4C2M32D1-5BCN | Alliance Memory, Inc. | IC DRAM 64MBIT PARALLEL 144BGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 15 ns | 1,281 | |
 | | AS4C2M32D1-5BIN | Alliance Memory, Inc. | IC DRAM 64MBIT PARALLEL 144BGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 15 ns | 990 | |
 | | AS4C2M32D1A-5BCN | Alliance Memory, Inc. | IC DRAM 64MBIT PARALLEL 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: 15 ns | 967 | |