 | | AS4C2M32SA-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 478 | |
 | | AS4C2M32SA-7TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 658 | |
 | | AS4C2M32SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 86TSOP II | Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 147 | |
 | | AS4C32M16D1-5BAN | Alliance Memory, Inc. | IC DRAM 512MBIT SSTL 2 60FBGA | Memory | 60-FBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,828 | |
 | | AS4C32M16D1-5BANTR | Alliance Memory, Inc. | IC DRAM 512MBIT SSTL 2 60FBGA | Memory | 60-FBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 79 | |
 | | AS4C32M16D1-5BCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 695 | |
 | | AS4C32M16D1-5BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,542 | |
 | | AS4C32M16D1-5BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 471 | |
 | | AS4C32M16D1-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,130 | |
 | | AS4C32M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,188 | |
 | | AS4C32M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 282 | |
 | | AS4C32M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 174 | |
 | | AS4C32M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 104 | |
 | | AS4C32M16D1A-5TAN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 832 | |
 | | AS4C32M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 710 | |
 | | AS4C32M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 635 | |
 | | AS4C32M16D1A-5TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 486 | |
 | | AS4C32M16D1A-5TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 103 | |
 | | AS4C32M16D1A-5TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,130 | |
 | | AS4C32M16D2-25BANTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 84TFBGA | Memory | 84-TFBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 685 | |